S29PL127J70BAI000 Allicdata Electronics
Allicdata Part #:

1274-1166-ND

Manufacturer Part#:

S29PL127J70BAI000

Price: $ 7.74
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 80FBGA
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 70...
DataSheet: S29PL127J70BAI000 datasheetS29PL127J70BAI000 Datasheet/PDF
Quantity: 86
1 +: $ 7.03080
Stock 86Can Ship Immediately
$ 7.74
Specifications
Series: PL-J
Packaging: Tray 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Supplier Device Package: 80-FBGA (8x11)
Description

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Memory

The S29PL127J70BAI000 is a non-volatile CMOS single power Flash Memory designed specifically for application in consumer, industrial, and automotive electronics. It is in wide use in a variety of high-performance consumer, industrial, and automotive electronics including a variety of medical and industrial control systems, consumer audio/video equipment, automotive electronics and more. It is based on a 128Mb Flash device architecture. This device is composed of 32Mb blocks, comprising 918K pages (1.5K bytes/page) or 256K words (8 bits/word). The devices also feature an access time as fast as 7.5ns.

The access mode of the S29PL127J70BAI000 is based on the traditional byte code method. That is, the first byte of a page is the byte code and it must be programmed before the other data bytes. Byte codes are used to indicate whether the page is programmed, erased, or a linked page. In addition, for block erasure, the system must first transfer the valid data from the block to be erased to the data page of another page.

The S29PL127J70BAI000 is designed with a floating gate transistor array which contains the page array and a single write page. Writing and erasing of the different sectors are controlled through appropriate combinations of pulse width and voltage levels. To write data, the array is grown to contain a single write page. In the process, the data is written to the specified page and the programmed page is then reverse biased to zero volt. To erase data, the array is reverse biased to zero potential with a positive voltage applied and when the voltage reaches the erase voltage, the data on the array is erased. In order to retain the data, the volatile voltage must be maintained on the transistor array during the entire write and erase cycle.

The S29PL127J70BAI000 also provides a reliable fail-safe write and erase operation. The fail-safe write and erase protection is transparent to the user and requires no additional programming. The write protection enables the system to write all data prior to the write command, ensuring that data written can be correctly recovered from the device.

The S29PL127J70BAI000 memory device provides a wide range of applications. These include flash memory for consumer and industrial applications, data storage for medical, industrial and automotive applications, data logging for medical and industrial applications, personal data storage for medical, industrial and automotive applications, and program memory for automotive and computer applications.

In summary, the S29PL127J70BAI000 is a non-volatile CMOS single power Flash Memory designed for a wide range of application in consumer, industrial, and automotive electronics. It is built with a single floating gate transistor array which contains the page array and a single write page. Writing and erasing of the different sectors are controlled through appropriate combinations of pulse width and voltage levels. It also provides a fail-safe write and erase protection.

The specific data is subject to PDF, and the above content is for reference

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