Allicdata Part #: | S70GL02GP12FFI020-ND |
Manufacturer Part#: |
S70GL02GP12FFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 2G PARALLEL 64FBGA |
More Detail: | FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Pa... |
DataSheet: | S70GL02GP12FFI020 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 2Gb (256M x 8, 128M x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-FBGA (11x13) |
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.Memory is an important component of a computer or computing system. One specific example of memory is the S70GL02GP12FFI020 device. The S70GL02GP12FFI020 is a type of flash memory, which is non-volatile, meaning that it does not need to be powered in order to retain its data. This makes the device ideal for applications where a data retention without power is necessary.
The S70GL02GP12FFI020 is a 2 Gbits flash memory device that features a small surface-mount package and is specifically designed for application in set-top boxes, digital TVs, car navigation systems and other embedded applications. It is a multi-level cell (MLC) flash memory, meaning that it can store multiple bits of data per memory cell. This type of flash memory is more efficient than a single-level cell (SLC) flash memory, making it a more cost-effective solution for certain applications.
The S70GL02GP12FFI020 device supports multiple read/write operations, meaning that it can access or store information at high speeds. It has a fast program/erase speed and is capable of data transfers up to a maximum of 32 megabits per second. The device also features error-correction and built-in BIST logic which can be used to determine the integrity of the device over its lifetime. This makes the S70GL02GP12FFI020 ideal for applications where accuracy and reliability are priorities.
In terms of its working principle, the S70GL02GP12FFI020 is based on a multi-level cell (MLC) architecture. This architecture uses two or more levels of electrical charge to represent data in each cell. By increasing the amount of levels, the amount of data which can be stored in a given cell is also increased. The S70GL02GP12FFI020 uses 3.3 volts and increases the charge of its memory cells in increments of 1.8 volts. This allows for greater efficiency when storing data and enables a faster data transfer rate.
The S70GL02GP12FFI020 is ideal for a range of embedded applications. Its robust design and fast data transfer rates make it a great choice for applications where reliability and speed are important. Its non-volatile nature and error-correction features make it suitable for applications where data retention without power is necessary. These features, combined with its low cost, make it a great choice for embedded applications.
The specific data is subject to PDF, and the above content is for reference
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