Allicdata Part #: | S70GL02GP11FAIR13-ND |
Manufacturer Part#: |
S70GL02GP11FAIR13 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 2G PARALLEL 64FBGA |
More Detail: | FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Pa... |
DataSheet: | S70GL02GP11FAIR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 2Gb (256M x 8, 128M x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-FBGA (11x13) |
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Memory
S70GL02GP11FAIR13 application field and working principle
The S70GL02GP11FAIR13 is a high performance multi-chip package NOR Flash memory device that provides a combination of large storage capacity, fast cycle times, and fast access time. It is often used in applications such as portable audio players, digital camera and cellular phones, where space and power constraints mean that very cost-effective and reliable memories are required.
S70GL02GP11FAIR13 is non-volatile electrically erasable and programmable (EEPROM) Flash memory device. It is based on NOR architecture and uses MirrorBit technology to provide both performance and capacity. The memory includes 512Mbits of storage capacity and has high density 2KB data blocks. It features an advanced double-level data protection system to protect data in the event of power failure.
The main features of the S70GL02GP11FAIR13 are its large capacity, small footprint, fast data access and low power consumption. The device has an access time of 65ns and a write cycle time of 500µs. It also features a voltage shift on power up, enabling the chip to save power when not in use. This is a key feature for portable devices, as it allows the chip to remain in sleep mode and extend battery life. The device supports SPI, I2C, Serial, and Parallel interfaces so it can be easily integrated into existing designs. The wide operating temperature range from 40°C to 85°C, as well as the high endurance level and low interference, make this a very reliable memory solution.
The S70GL02GP11FAIR13 uses Electrical Erase and Program (EEWP) technology to program and erase bits on the chip. This technology is based on the Fowler-Nordheim tunneling effect and is an advanced version of the standard hot electron injection. Due to this effect, electrons are injected into the gate oxide of the cell by applying a strong electric field, creating a junction between the gate oxide and the silicon substrate. This causes the electrons to tunnel through the gate oxide and modifies the charge in the memory cell, which can be programmed or erased.
In conclusion, the S70GL02GP11FAIR13 is an ideal memory solution for applications that require a combination of large capacity, fast cycle times, and fast access time. It is an ideal choice for applications such as portable audio players, digital cameras, cell phones and other space and power-restricted applications.
The specific data is subject to PDF, and the above content is for reference
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