SA11AHE3/54

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TVS (Transient Voltage Suppressors) are a type of semiconductor diode device that is used to protect electrical circuits from overvoltage transients. The SA11AHE3/54 is a Silicon-Avalanche TVS diode developed for high-performance automotive applications.

The most common type of TVS diode is the unidirectional transient voltage suppressor, also known as the Zener diode. This type of TVS consists of a P-type substrate and an N-type epitaxial layer which forms the rectifying junction. The rectifying junction is the main device for dissipating the electrical energy of an overvoltage transient.

In contrast to Zener diodes, the SA11AHE3/54 has an Avalanche breakdown structure. This structure consists of an N-type substrate and a P-type epitaxial layer. This structure allows the device to have a higher breakdown voltage compared to a Zener diode of the same size, and it also provides a higher energy capability for suppressing transients. The device is designed to withstand repetitive ESD strikes up to 1500 Volts.

The working principle of the SA11AHE3/54 is based on the Avalanche breakdown mechanism. When the device is subjected to a high electric field, due to an overvoltage transient, the electric field strength is intensified in the small areas near the junction points. This allows the minority carriers in the junction to accelerate faster, and they collide with other carriers in the junction, resulting in an avalanche effect. This results in a large amount of energy being released, which is dissipated through the device and helps to prevent overvoltage transients.

The SA11AHE3/54 is well suited for automotive applications, such as automotive electronic ECU, automotive cameras, automotive sensors, and automotive power distribution modules. It is designed to suppress transients and surge events caused by ESD and EFT up to 1500V. This device is also suitable for applications which require high reliability and stability, such as medical equipment, communications systems, home appliances, and industrial control equipment.

In conclusion, the SA11AHE3/54 is a high-performance Silicon-Avalanche TVS diode developed for automotive applications. Its Avalanche breakdown structure allows the device to have a higher breakdown voltage and higher energy capability for suppressing transients, and it is designed to withstand repetitive ESD strikes up to 1500 Volts. This device is suitable for applications which require high reliability and stability, such as automotive electronics, medical equipment, communications systems, home appliances, and industrial control equipment.

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