SCH1331-TL-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	84 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	5.6nC @ 4.5V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	405pF @ 6V
FET Feature:	--
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-SCH
Package / Case:	SOT-563, SOT-666

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Introduction

SCH1331-TL-H is a single top power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for IP3 (third intermodulation) and high-linearity applications. Due to its exceptional properties and specific design, it can be used in both low-noise amplifiers and power stages. With its power output capability, excellent linearity and low turn-on/turn-off times, the SCH1331-TL-H is ideal for applications requiring power and reliability.

Application Field

The SCH1331-TLH can be used in a wide variety of different applications, including power stages, high-linearity amplifiers, and power supplies. It can be used in mobile base station drivers, radio remote control and other RF systems, as well as in a range of different RF and microwave applications such as satellite communication systems, amplifiers, radio links and WiMAX amplifiers. The SCH1331-TL-H is also well-suited for commercial and industrial applications, such as renewable energy systems, broadcast equipment, power converters, rail, electrical vehicles and DC-DC converters. It is also designed to operate in high temperature and adverse environments, making it ideal for robust industrial applications.

Working Principle

SCH1331-TL-H is a single top-gate MOSFET with integrated circuit protection. When the gate voltage reaches a certain threshold, the device is switched on, acting as a resistor between the source and drain terminals. This enables the device to pass current from the source to the drain, creating a conductive path. When the gate voltage is below the threshold voltage, the device switches off, acting as an insulator between the source and drain. The device features a low gate leakage current, allowing it to remain “off” until it is activated by a relatively low voltage. Additionally, it also features thermal compensation and self-protection circuitry to protect it against over-voltage and over-current. This ensures it remains safe to use and prevents it from short-circuiting in high-temperature and high-power applications.

Conclusion

The SCH1331-TL-H is a powerful single top power MOSFET with excellent linearity, low turn-on/turn-off times and low gate leakage current. Its wide range of applications and impressive operational characteristics make it a popular choice for RF/microwave systems, as well as applications requiring high-power and reliable operation.

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