SCH1430-TL-H

Vgs(th) (Max) @ Id:	--
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	6-SCH
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	800mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	128pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	1.8nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	125 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SCH1430-TL-H is a type of high frequency field effect transistor (FET) designed for use in a variety of applications. It is a double-diffused MOSFET (metal-oxide-semiconductor FET) comprised of a source, a drain and a gate, and built on a substrate of silicon or gallium arsenide. SCH1430-TL-H are characterized by their low noise, low on-resistance, high input impedance and high supply voltage, as well as a high speed operation due to their high unity gain frequency.The SCH1430-TL-H is designed for use in telecommunication, power management, and audio applications, as well as for switching, sensing and amplification in industrial, instrumentation and automotive environments. In addition, this device is also suitable for use in various high-speed analog to digital and digital to analog conversion applications.The most common application of the SCH1430-TL-H is as a switching device. This device is often used in conjunction with a microcontroller or digital signal processor to control high-current loads, such as relays or motors, where high frequency switching is required. Additionally, the device can also be used in analog switching applications, such as audio mixing, and in digital logic applications, such as timer circuits.The working principle of the SCH1430-TL-H is based on the two-terminal switch action of the gate and the drain. When the gate terminal of the FET is supplied with a positive voltage, the resistance between the source and the drain is reduced, and current is allowed to flow through the device. Conversely, when the gate terminal is connected to ground or supplied with a negative voltage, the resistance between the source and the drain is increased, preventing current flow through the device. This switching action of the gate terminal thus allows the device to be used as a switch or a regulator.In addition to the switching action, the SCH1430-TL-H is also characterized by its excellent high frequency performance. The high unity gain frequency of this device is achieved through the use of a low input capacitance, which in turn results in a high switching speed and uniform gain. This allows the device to be used in high-speed analog or digital applications, where speed is critical. Other features of the device include its low on-resistance, its low gate-to-drain capacitance, and its low power consumption.In conclusion, the SCH1430-TL-H FET is a versatile device that is suitable for use in a wide variety of applications. Its high speed operation and low power consumption make it an ideal solution for switching and amplifying signals in high-speed analog and digital systems. Additionally, its excellent high frequency performance and low on-resistance make it a viable option for regulating current in high current loads and for sensing and switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description