SCH1439-TL-H

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SCH1439-TL-H is a P-channel enhancement mode field effect transistor, manufactured by IXYS Corporation. It has a wide range of applications including switching, analog control and signal amplifier. The device features low on-resistance, high gain and high frequency operation, making it suitable for use in power switching applications.

SCH1439-TL-H features a P-channel MOSFET structure consisting of a single gate with an insulated gate. The field effect transistor functions as a variable resistor, with the resistance varying with the voltage applied to the gate. The resistance between the source and drain can be controlled by the gate voltage applied to the Gate-Source terminal.

The transmission gate at the center of the device is made up of 7-20 μm polysilicon layer and a 3.3 μm dielectric layer on top. The structure ensures that the on-resistance of the transistor remains low and stable under all operational conditions. The device also has a maximum on-resistance rated at 9Ω and a threshold voltage of 3V.

SCH1439-TL-H is well-suited for applications such as power management systems, DC-DC converters and motor control systems. It is also suitable for use in analog devices for signal processing, signal amplifier and analog control.

The key features of SCH1439-TL-H include its low on-resistance, high gain, high-frequency operation and low gate-source capacitance. The low on-resistance of the device means that it has very low power dissipation, allowing it to remain cool even when operating at high voltages and frequencies. The high gain of the device enables it to have very low noise levels, making it well-suited for signal processing applications. Additionally, the low gate-source capacitance enables the device to have very fast response times.

In summary, SCH1439-TL-H is a P-channel enhancement mode field effect transistor, manufactured by IXYS Corporation. It has a wide range of applications including switching, analog control and signal amplifier. The device features low on-resistance, high gain, high frequency operation and low gate-source capacitance, making it suitable for use in power switching, analog devices and signal processing applications.

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