Allicdata Part #: | SCTWA20N120-ND |
Manufacturer Part#: |
SCTWA20N120 |
Price: | $ 6.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IC POWER MOSFET 1200V HIP247 |
More Detail: | |
DataSheet: | SCTWA20N120 Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 5.83727 |
Series: | * |
Part Status: | Active |
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A SCTWA20N120 is an advanced type of high-voltage Insulated Gate Bipolar Transistor (IGBT) ideal for a range of applications. It is part of the STMicroelectronics STGIPN family of IGBTs. The SCTWA20N120 IGBT is designed to provide increased power in a compact, cost-effective package. The transistor is capable of handling up to 20 amps at 1200V, making it ideal for a variety of industrial, medical, and automotive applications. It is also suitable for mobile communications, power system control, and home appliance control.
The SCTWA20N120 IGBT is a single-gate, insulated-gate field-effect transistor (IGFET). It is characterized by its high operating temperature range, low internal resistance, and low gate drive power. The IGBT is constructed of a double-sided power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a bipolar junction transistor (BJT) connected in a standard configuration. The MOSFET is the device\'s main component, providing the high current and voltage capability. The BJT controls the gate current and voltage applied to the MOSFET.
When the SCTWA20N120 is turned on, the gate voltage applied to the MOSFET causes a channel to be formed between the source and drain. This channel allows electrons to flow from one side to the other. The MOSFET controls the amount of current flowing through the channel. As the voltage across the MOSFET increases, the current in the channel also increases. The BJT is also controlled by the gate voltage, but its function is to limit the voltage that can be applied to the MOSFET. This ensures that the power dissipation of the device does not exceed the ratings.
The SCTWA20N120 is designed to operate in high-power applications. It is capable of handling up to 20 amps at 1200V. The device is designed to be efficient, with a low gate drive power requirement and a low internal resistance. This helps to reduce power dissipation and improve overall efficiency.
The SCTWA20N120 IGBT is a high-performance, cost-effective option for high-power applications. It is ideal for industrial, medical, and automotive applications, as well as mobile communications, power system control, and home appliance control. The device provides efficient operation, high power handling capabilities, and easy integration into existing designs. It is a good choice for those looking for a reliable and efficient IGBT solution.
The specific data is subject to PDF, and the above content is for reference
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