SCTWA20N120 Allicdata Electronics
Allicdata Part #:

SCTWA20N120-ND

Manufacturer Part#:

SCTWA20N120

Price: $ 6.49
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IC POWER MOSFET 1200V HIP247
More Detail:
DataSheet: SCTWA20N120 datasheetSCTWA20N120 Datasheet/PDF
Quantity: 1000
600 +: $ 5.83727
Stock 1000Can Ship Immediately
$ 6.49
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A SCTWA20N120 is an advanced type of high-voltage Insulated Gate Bipolar Transistor (IGBT) ideal for a range of applications. It is part of the STMicroelectronics STGIPN family of IGBTs. The SCTWA20N120 IGBT is designed to provide increased power in a compact, cost-effective package. The transistor is capable of handling up to 20 amps at 1200V, making it ideal for a variety of industrial, medical, and automotive applications. It is also suitable for mobile communications, power system control, and home appliance control.

The SCTWA20N120 IGBT is a single-gate, insulated-gate field-effect transistor (IGFET). It is characterized by its high operating temperature range, low internal resistance, and low gate drive power. The IGBT is constructed of a double-sided power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a bipolar junction transistor (BJT) connected in a standard configuration. The MOSFET is the device\'s main component, providing the high current and voltage capability. The BJT controls the gate current and voltage applied to the MOSFET.

When the SCTWA20N120 is turned on, the gate voltage applied to the MOSFET causes a channel to be formed between the source and drain. This channel allows electrons to flow from one side to the other. The MOSFET controls the amount of current flowing through the channel. As the voltage across the MOSFET increases, the current in the channel also increases. The BJT is also controlled by the gate voltage, but its function is to limit the voltage that can be applied to the MOSFET. This ensures that the power dissipation of the device does not exceed the ratings.

The SCTWA20N120 is designed to operate in high-power applications. It is capable of handling up to 20 amps at 1200V. The device is designed to be efficient, with a low gate drive power requirement and a low internal resistance. This helps to reduce power dissipation and improve overall efficiency.

The SCTWA20N120 IGBT is a high-performance, cost-effective option for high-power applications. It is ideal for industrial, medical, and automotive applications, as well as mobile communications, power system control, and home appliance control. The device provides efficient operation, high power handling capabilities, and easy integration into existing designs. It is a good choice for those looking for a reliable and efficient IGBT solution.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SCTW" Included word is 4
Part Number Manufacturer Price Quantity Description
SCTWA30N120 STMicroelect... 13.39 $ 1000 IC POWER MOSFET 1200V HIP...
SCTWA50N120 STMicroelect... 18.56 $ 1000 MOSFET N-CH 1200V 65A HIP...
SCTWA10N120 STMicroelect... 5.32 $ 1000 IC POWER MOSFET 1200V HIP...
SCTWA20N120 STMicroelect... 6.49 $ 1000 IC POWER MOSFET 1200V HIP...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics