SCTWA30N120

Application Field of SCTWA30N120

The SCTWA30N120 is an N-channel MOSFET with a breakdown voltage of 300 V and an on-resistance of 75 mohm. It is suitable for applications that require low on-resistance and high-voltage operation. It is suitable for use as a switch in power circuits, such as in DC/DC converters and solar inverters, as well as in motor controls. It is also suitable for use in automotive applications, such as in power management for engine control modules and interior lighting.

In addition, the SCTWA30N120 can also be used in high-frequency switching applications, such as in switched-mode power supplies. It has a wide voltage range and low on-resistance, which make it suitable for high-frequency, high-efficiency applications. Additionally, it has a low gate-drain capacitance, allowing for faster switching speeds and more efficient power delivery.

Working Principle of SCTWA30N120

The SCTWA30N120 is a depletion mode MOSFET. This means that, when no gate voltage is applied, the MOSFET is ‘on’, allowing current to flow between the drain and the source. When a negative voltage is applied to the gate, it reduces the number of free electrons in the channel, which reduces the current flow between the drain and the source and turns the MOSFET ‘off’.

The MOSFET also has an ‘enhancement’ mode. This means that when a positive voltage is applied to the gate, it increases the number of free electrons in the channel, allowing a higher current flow between the drain and the source and turning the MOSFET ‘on’.

The SCTWA30N120 has a low on-resistance and a low capacitive loading, making it suitable for high-frequency switching applications. It also has a wide voltage range, which makes it suitable for high-voltage applications. Additionally, it has a low gate-drain capacitance, which allows for faster switching speeds and more efficient power delivery.