Allicdata Part #: | SH8M11TB1-ND |
Manufacturer Part#: |
SH8M11TB1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 3.5A 8SOP |
More Detail: | Mosfet Array N and P-Channel 30V 3.5A 2W Surface M... |
DataSheet: | SH8M11TB1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Rds On (Max) @ Id, Vgs: | 98 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 85pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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Transistors – FETs,MOSFETs – Arrays
The SH8M11TB1 is a field effect transistor array that is specially designed for a variety of low voltage, high frequency applications. It consists of three field effect transistors, each providing an excellent channel conductance. The package contains two source emitters, a common drain, and a common gate, which is the input of the device.
Features
- High speed capability with low power dissipation
- Low resistance output
- High Input impedance and low output capacitance
- Low noise immunity
- High voltage and current capability
- High switching speed
- High transient immunity
- Excellent thermal stability
Application
The SH8M11TB1 is suitable for a wide range of applications including motor and power control circuits, home audio systems, industrial and automotive instrumentation, portable water and dust proof amplifiers, and various portable electronic products such as smart phones and mp3 players. Additionally, it can be used as a buffer in discrete amplifier circuits and can also be used in high speed multiplexers and analog-to-digital converters.
Working Principle
The SH8M11TB1 is a three-transistor array that works based on the principle of field effect transistors, or FETs. This type of transistor is capable of controlling a large electric current through the action of an electrode which is placed near the gate of a semiconductor material. In the SH8M11TB1, there are two source emitters and one common drain. When a voltage that is below the threshold voltage is applied to the gate, the common drain is activated, leading to a current flow.
The sources of the SH8M11TB1 are capable of producing a high voltage and current output and are capable of protecting the transistor array from excessive operating temperature and environmental conditions. The high switching speed of the SH8M11TB1 is also beneficial in increasing the speed of applications where control of current is important and the transient immunity helps reduce the effects of power supply glitches and electrostatic discharges. This device is also durable, with excellent thermal stability.
The specific data is subject to PDF, and the above content is for reference
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