Allicdata Part #: | SH8M4TB1TR-ND |
Manufacturer Part#: |
SH8M4TB1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 9A/7A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 9A, 7A 2W Surface... |
DataSheet: | SH8M4TB1 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *M4 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A, 7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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SH8M4TB1 is a vertical DMOS FET array device. It includes twelve independent N-channel enhancement mode vertical DMOS FETs with an integral diode and matching circuits. The matching circuits allow each transistor to deliver a uniform current, which can be current limited with external components. The device is designed to operate in the switching and amplifier modes. SH8M4TB1 is suitable for high-speed digital applications such as switching regulators, low-dropout regulators, digital switches, bridges and converters.
Application Fields of SH8M4TB1
The SH8M4TB1 is typically used in digital circuits where low on-resistance and low gate charge are important. It is suitable for applications such as switching power supplies, digital power control, UPS systems, computer peripherals, fan speed control, AC/DC converters, motor control and DC/DC converters. The device is also suitable for low-noise amplifiers, Class D audio amplifiers, pulse-width modulation (PWM) and other analog applications.
Working Principle of SH8M4TB1
The SH8M4TB1 device is a vertical DMOS FET array. It is made up of twelve N-channel enhancement-mode transistors with integral diodes and matching circuits. Each transistor has its own gate, source and drain connections and works independently from the other transistors. By applying a voltage to the gate of each transistor, it can be turned on or off. When the transistor is off, no current flows through the transistor and the gate-source voltage is equal to the gate voltage. When the transistor is on, a current flows between the source and the drain and the gate-source voltage is less than the gate voltage. In addition, the matching circuits allow each transistor to deliver a uniform current, which can be current limited with external components.
The device is designed to operate in the switching and amplifier modes. When operating in the switching mode, the device is used to switch currents from one source to another. When operating in the amplifier mode, it is used to amplify or attenuate a signal. In the amplifier mode, the device can be used for low-noise amplifiers, Class D audio amplifiers, pulse-width modulation (PWM) and other analog applications.
The SH8M4TB1 is a vertical DMOS FET array which can be used in a variety of applications. It is suitable for switching and low-noise analog amplification applications due to its low on-resistance and low gate charge. In addition, the device offers matching circuits which allow each transistor to deliver a uniform current, which can be current limited with external components. The device is an ideal solution for digital circuits where low on-resistance and low gate charge are desired.
The specific data is subject to PDF, and the above content is for reference
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