SH8M14TB1 Allicdata Electronics
Allicdata Part #:

SH8M14TB1-ND

Manufacturer Part#:

SH8M14TB1

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 30V 9A/7A SOP
More Detail: Mosfet Array N and P-Channel 30V 9A, 7A 2W Surface...
DataSheet: SH8M14TB1 datasheetSH8M14TB1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.41586
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SH8M14TB1 transistor array is an integrated circuit composed of individually-controlled field effect transistors (FETs). The SH8M14TB1 is a monolithic device composed of fourty transistor pairs, with each pair utilizing a common drain and controlled by a single gate. This device is designed to be an easy-to-use logic level FET array, providing reliable switching of high current loads.

The FET pairs of the SH8M14TB1 are arranged in an efficient manner, making the device ideal for applications which require high current switching with minimal power consumption. The bottom transistor in each pair is a P-channel enhancement mode FET, while the top transistor is an N-channel enhancement mode FET. This design allows for efficient current flow between the source and the drain, and consequently, a lower power consumption.

The SH8M14TB1 offers several advantages over previous designs, such as low total capacitance, fast switching, high reliability, and low on-resistance. The device also offers the ability to easily reposition the common drains in order to maximize current flow and voltage ratings across the FETs. Additionally, the device is able to handle high currents with multiple FETs in parallel.

The working principle of the SH8M14TB1 is relatively simple. When the gates of the FETs are open, the FETs will act as a current path between the source and the drain. Current flowing through the FETs will be limited by the amount of charge flowing through the gate, which is set by the gate voltage. When the gate voltage is low, the FETs will be in an active state, allowing current to flow freely. Conversely, when the gate voltage is high, the FETs will be in an inactive state, disallowing any current flow and thus providing a switch-like function.

The SH8M14TB1 has been designed to be extremely versatile and therefore is suitable for use in many different applications. Common applications include power supply sequencing, interface chipsets, level shifting, logic gate circuits, LED driving and motor control. Additionally, the SH8M14TB1 can be used in the design of SMPS (Switched Mode Power Supplies) in order to increase efficiency and minimize power loss.

In conclusion, the SH8M14TB1 is a versatile, easy-to-use logic level FET array. The device has an efficient design, making it suitable for a wide variety of applications. Additionally, the device offers the advantages of low total capacitance, low on-resistance and high current rating. This makes the SH8M14TB1 an ideal choice for applications which require reliable, efficient and low-power switching.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SH8M" Included word is 12
Part Number Manufacturer Price Quantity Description
SH8M41GZETB ROHM Semicon... 0.41 $ 1000 MOSFET N/P-CH 80V 3.4A/2....
SH8M14TB1 ROHM Semicon... 0.46 $ 1000 MOSFET N/P-CH 30V 9A/7A S...
SH8M11TB1 ROHM Semicon... -- 1000 MOSFET N/P-CH 30V 3.5A 8S...
SH8M12TB1 ROHM Semicon... -- 1000 MOSFET N/P-CH 30V 5A/4.5A...
SH8M70TB1 ROHM Semicon... 0.0 $ 1000 MOSFET N/P-CH 250V 3A/2.5...
SH8M41TB1 ROHM Semicon... 0.46 $ 2500 MOSFET N/P-CH 80V 3.4A/2....
SH8M24TB1 ROHM Semicon... 0.48 $ 2500 MOSFET N/P-CH 45V 4.5A/3....
SH8M3TB1 ROHM Semicon... -- 2500 MOSFET N/P-CH 30V 5A/4.5A...
SH8M2TB1 ROHM Semicon... -- 1000 MOSFET N/P-CH 30V 3.5A SO...
SH8M5TB1 ROHM Semicon... 0.56 $ 2500 MOSFET N/P-CH 30V 6A/7A S...
SH8M4TB1 ROHM Semicon... -- 2500 MOSFET N/P-CH 30V 9A/7A 8...
SH8M13GZETB ROHM Semicon... -- 1000 MIDDLE POWER MOSFET SERIE...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics