Allicdata Part #: | SH8M14TB1-ND |
Manufacturer Part#: |
SH8M14TB1 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 9A/7A SOP |
More Detail: | Mosfet Array N and P-Channel 30V 9A, 7A 2W Surface... |
DataSheet: | SH8M14TB1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.41586 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A, 7A |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The SH8M14TB1 transistor array is an integrated circuit composed of individually-controlled field effect transistors (FETs). The SH8M14TB1 is a monolithic device composed of fourty transistor pairs, with each pair utilizing a common drain and controlled by a single gate. This device is designed to be an easy-to-use logic level FET array, providing reliable switching of high current loads.
The FET pairs of the SH8M14TB1 are arranged in an efficient manner, making the device ideal for applications which require high current switching with minimal power consumption. The bottom transistor in each pair is a P-channel enhancement mode FET, while the top transistor is an N-channel enhancement mode FET. This design allows for efficient current flow between the source and the drain, and consequently, a lower power consumption.
The SH8M14TB1 offers several advantages over previous designs, such as low total capacitance, fast switching, high reliability, and low on-resistance. The device also offers the ability to easily reposition the common drains in order to maximize current flow and voltage ratings across the FETs. Additionally, the device is able to handle high currents with multiple FETs in parallel.
The working principle of the SH8M14TB1 is relatively simple. When the gates of the FETs are open, the FETs will act as a current path between the source and the drain. Current flowing through the FETs will be limited by the amount of charge flowing through the gate, which is set by the gate voltage. When the gate voltage is low, the FETs will be in an active state, allowing current to flow freely. Conversely, when the gate voltage is high, the FETs will be in an inactive state, disallowing any current flow and thus providing a switch-like function.
The SH8M14TB1 has been designed to be extremely versatile and therefore is suitable for use in many different applications. Common applications include power supply sequencing, interface chipsets, level shifting, logic gate circuits, LED driving and motor control. Additionally, the SH8M14TB1 can be used in the design of SMPS (Switched Mode Power Supplies) in order to increase efficiency and minimize power loss.
In conclusion, the SH8M14TB1 is a versatile, easy-to-use logic level FET array. The device has an efficient design, making it suitable for a wide variety of applications. Additionally, the device offers the advantages of low total capacitance, low on-resistance and high current rating. This makes the SH8M14TB1 an ideal choice for applications which require reliable, efficient and low-power switching.
The specific data is subject to PDF, and the above content is for reference
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