SH8M12TB1 Allicdata Electronics
Allicdata Part #:

SH8M12TB1-ND

Manufacturer Part#:

SH8M12TB1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
More Detail: Mosfet Array N and P-Channel 30V 5A, 4.5A 2W Surfa...
DataSheet: SH8M12TB1 datasheetSH8M12TB1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The SH8M12TB1 is a Mosfet Array designed to provide high current switching and amplification of electrical signals. It is a part of a large family of components commonly referred to as the Power FET or PowFET.

The SH8M12TB1 has four independent MOSFET channel that have been integrated into a single package. The integrated channels offer a high current capacity, low power loss and fast switching speeds. This enables it to be used in a variety of applications, including power conversion, motor control and switching power.

The SH8M12TB1 has three gate terminals which are internally connected to the Gate electrodes of the four power MOSFETs inside the package. There is also a drain terminal and a source terminal. Each of the four MOSFETS is used as a single switch and they can be individually controlled by the gate signal.

The SH8M12TB1 has a powerful working principle. It works by controlling the amount of current that is allowed to flow from drain to source across the four channels. When the gate voltage is applied, the MOSFETs turn on and allow current to pass through the drain to source. When the source voltage is low, the current through the channels will be low. When the source voltage is high, the current through the channels will be higher. The amount of current that is allowed to flow through the channels is controlled by the gate voltage and can be adjusted to get the desired level of current for the application.

The SH8M12TB1 is a versatile component that can be used in a variety of applications where precise control of current is required. It can be used in switched mode power supplies, motor control circuits and switching power amplifiers. It is also suitable for general purpose power MOSFETs and is available in several packages.

The SH8M12TB1 is an ideal choice when it comes to power conversion, motor control and switching power applications. It is robust and reliable and offers excellent performance. It is easily integrated into a wide range of application circuits and it can be adjusted to suit the specific needs of the application.

The specific data is subject to PDF, and the above content is for reference

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