SH8M41GZETB

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The SH8M41GZETB is a type of Power MOSFET Array. The main application field of this array is motor control and power supplies. This array includes four N-Channel power MOSFETs, each with different ISO ratings.

The working principle of the SH8M41GZETB array is based on the well-known MOSFET transistor. By manipulating the gate voltage, the current flow through a MOSFET can be controlled. This allows for easy switching and regulating of electric current in motor control and power supplies.

The SH8M41GZETB array has an on-resistance value of 3.3 mΩ, which makes it ideal for high-power applications. It has a maximum drain-source voltage of 600 V and a drain current of up to 103 A. The array also has additional features such as over-temperature protection, Rds matching between paralleled MOSFETs and advanced shutdown. The chip also has a low package capacitance, making it suitable for high-speed switching applications.

The SH8M41GZETB array also benefits from its high drain-source on-resistance, as it allows for power savings. Its small footprint also makes it suitable for applications where size is a factor. Finally, the array is protected from short circuit, over-voltage and over-current situations, making it a reliable option for higher power applications.

In conclusion, the SH8M41GZETB array is an ideal choice for motor control and power supplies. Its working principle is based on the well-known MOSFET transistor, and its features make it suitable for high-power applications. Its benefits, such as its low package capacitance, small footprint and over-temperature protection make it a reliable choice for a variety of applications.

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