SI1026X-T1-GE3 Allicdata Electronics

SI1026X-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SI1026X-T1-GE3TR-ND

Manufacturer Part#:

SI1026X-T1-GE3

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 60V 0.305A SC89-6
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Su...
DataSheet: SI1026X-T1-GE3 datasheetSI1026X-T1-GE3 Datasheet/PDF
Quantity: 150000
3000 +: $ 0.10354
Stock 150000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
Description

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The SI1026X-T1-GE3 is a series of three terminal silicon field effect transistors, abbreviated to FETs or FET arrays, that are commonly used in the design of modern applications. They have a range of features including low voltage operation, low RDS(on) resistance, fast switching and good thermal performance. The SI1026X-T1-GE3 is part of the array type of field effect transistors. This type of FETs has multiple terminals in order to provide more current and to reduce the total package size.

The SI1026X-T1-GE3 is designed specifically for low-voltage operation and it requires only a single supply voltage with a maximum frequency of 1.8MHz, which makes it ideal for signal processing applications. Its ultra-low on-resistance RDS(on) is 0.18 ohms at 3.3V and 0.13 ohms at 2.5V, which makes it highly efficient for power switching applications. Furthermore, its low RDS(on) allows the device to switch efficiently at high speed, making it ideal for high speed signal applications. Moreover, the device offers low power consumption due to its high efficiency and low-voltage operation.

The SI1026X-T1-GE3 can also be used as a temperature sensor. This is because the temperature coefficient of the SI1026X-T1-GE3 is 0.000073/K, which means that the device has a low temperature coefficient of resistance. This allows the device to accurately detect temperature and can be used as a temperature sensing device in various applications. Furthermore, this device features fast thermal response, which enables the device to accurately measure the temperature in a short period of time.

The SI1026X-T1-GE3 is also suitable for switching and crossbar applications, as it offers good step response, low leakage current and fast switching speeds. This makes the device ideal for designing crossbar applications, where it can be used for electrical routing of the signals. This can be used in a variety of fields, including high speed communications, physical layer switching and interconnects. The device can also be used in power management systems, as it offers good thermal performance and excellent power efficiency.

The SI1026X-T1-GE3 can be used in a variety of applications, including signal processing, power switching, temperature sensing and crossbar applications. Thanks to its high efficiency, low voltage operation and excellent thermal performance, the SI1026X-T1-GE3 is a perfect choice for modern applications, that require the best performance at an affordable price.

The specific data is subject to PDF, and the above content is for reference

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