Allicdata Part #: | SI1065X-T1-GE3TR-ND |
Manufacturer Part#: |
SI1065X-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 1.18A SC89-6 |
More Detail: | P-Channel 12V 236mW (Ta) Surface Mount SC-89-6 |
DataSheet: | SI1065X-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 156 mOhm @ 1.18A, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 236mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
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The SI1065X-T1-GE3 is a single N-Channel Enhancement Mode Field Effect Transistor (FET). It is used in a variety of applications in many different industries and its working principle is quite simple. It is a three terminal device that is mainly used as a switch between two regions, often a load and a source. When the FET is "on" the drain is connected to the source and when it is "off" the drain is connected to ground. The main function of these devices is to control electric current flow.
The SI1065X-T1-GE3 offers a wide range of applications from its use in switches to its use in audio amplifiers. A common application is in switching power supplies, where the FET is used to turn on and off the output of the power supply. It is also commonly used in audio amplifiers, where it is used to amplify signals. The SI1065X-T1-GE3 is also used in display backlighting systems and motor control systems.
The SI1065X-T1-GE3 is also well-suited for use in portable electronics and automotive applications due to its low power consumption and low on-resistance. This makes it an ideal choice for these types of applications. The low on-resistance also makes it suitable for use in switching high power loads such as electric motors.
In terms of its working principle, the FET works by controlling the electric current between its source and drain. It controls the current by acting as a gate between them, opening and closing them. When the gate is opened or closed, the current flow is either blocked or let through. The current is controlled by the amount of voltage applied to the gate. By increasing the voltage, the current will increase and by decreasing the voltage, the current will decrease.
The SI1065X-T1-GE3 is widely used in a variety of applications due to its simplicity and versatility. It is a very common and useful device that can be used in switches, audio amplifiers, and a variety of other circuits. Its low on-resistance and low power consumption makes it an ideal choice for applications that require efficiency and low power consumption. It is a staple in many areas of industry and is an important part of many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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