SI1023X-T1-E3

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The SI1023X-T1-E3 is a family of complementary metal-oxide semiconductor (CMOS) Insulated Gate Bipolar Transistor (IGBT) array products specifically designed for use in automotive, industrial and general purpose applications. It has a monolithic structure fabricated with N-channel and P-channel IGBTs which effectively eliminates external circuitry required to drive two separate transistors. The SI1023X-T1-E3 is manufactured using professional grade CMOS process, providing excellent product performance and parameters.

Features and Benefits

• Low on-resistance.
• High voltage and current ratings Superior current ratings for both N and P-channel devices.
• Easy to use CMOS level inputs.
• Enhanced protection features: Over-temperature protection, over-voltage protection, load dump protection.
• Low EMI performance.

Application Areas

The SI1023X-T1-E3 is designed for use in a variety of applications, including automotive, industrial and general purpose. The IGBT arrays are used in motor control applications such as lighting, car audio and power supply. The IGBTs can also be used in other applications such as power converters, inverters, motor controllers and turbines.

Working Principle

The SI1023X-T1-E3 is a CMOS Insulated Gate Bipolar Transistor (IGBT) array in which the N-channel and P-channel IGBTs are combined in a single monolithic device structure. This enables power applications that would require the addition of two separate transistors to operate with just one device. The IGBT array features low on-resistance and high voltage and current ratings, making it suitable for switching applications.

The IGBTs are switched on and off by applying a voltage across the gate-emitter junction of the corresponding N-channel and P-channel devices. When the two devices are in the on state, the voltage drop across the IGBTs is typically 20mV - 30mV. This low on-resistance allows for very efficient power switching as it reduces losses due to resistive heating.

The IGBT array also features robust protection features such as over-temperature protection and over-voltage protection that provide additional safety. The IGBT array also has EMI filtering capabilities, making it ideal for use in noise-sensitive applications.

Conclusion

The SI1023X-T1-E3 is an excellent choice for automotive, industrial and general purpose applications. With its low on-resistance, high voltage and current ratings, protection features and EMI filtering capabilities, the SI1023X-T1-E3 is an ideal solution for power applications requiring efficient power switching and noise mitigation.

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