| Allicdata Part #: | SI1021R-T1-GE3TR-ND |
| Manufacturer Part#: |
SI1021R-T1-GE3 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 190MA SC-75A |
| More Detail: | P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount ... |
| DataSheet: |  SI1021R-T1-GE3 Datasheet/PDF |
| Quantity: | 33000 |
| 1 +: | $ 0.13000 |
| 10 +: | $ 0.12610 |
| 100 +: | $ 0.12350 |
| 1000 +: | $ 0.12090 |
| 10000 +: | $ 0.11700 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SC-75A |
| Supplier Device Package: | SC-75A |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 250mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 23pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 15V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 190mA (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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Introduction
The SI1021R-T1-GE3 is a single N-Channel MOSFET that is commonly used in a variety of applications across a wide range of industries. This device is designed to provide reliable switching performance with low on-resistance and low threshold voltage, making it ideal for delivering stable and efficient power control in circuit designs. In this article, we will take a closer look at the applications and working principles of the SI1021R-T1-GE3.Applications
The SI1021R-T1-GE3 is a versatile device that can be used in a wide variety of applications. It is the perfect switch for automotive and portable power systems, such as electric vehicles, and can also be used in industrial automation and communications systems. Additionally, it is ideal for powering high-performance CPUs and video cards in desktop and laptop computer systems as well as for chargers and LED lighting applications.Payoff and Functional Block Diagram
The SI1021R-T1-GE3 is designed to provide excellent performance with a low on-resistance and low threshold voltage. This makes it ideal for delivering reliable and efficient switching operations in circuit designs. The device also provides fast switching times for improved response time and increased performance.The SI1021R-T1-GE3 features an integrated protection against electrostatic discharge and over-voltage. This helps to protect the circuit and provides a more reliable operation.Electrical Characteristics
The SI1021R-T1-GE3 is a single N-Channel MOSFET with a rating of 175V breakdown voltage and a surface mount package. The device has an RDS on (max) of 0.75Ω, which makes it well suited for switching applications. It also has a maximum drain-source on-state voltage of 1000V, making it ideal for applications which require high voltage switching. Additionally, the device has a rated continuous drain current of 55A and a total power dissipation of 115W, which makes it suitable for high-power switching applications.Working Principle
The SI1021R-T1-GE3 is a single N-channel MOSFET which works on the principle of depletion mode operation. This mode of operation is characterized by a linear region of operation which allows for transistors to be operated in a wide range of conditions. This is accomplished by changing the bias of the transistor to adjust the current that flows through the drain and source. When the input voltage is applied to the gate, it controls the bias of the transistor. This reduces or increases the current that is flowing through the drain and source, depending on the voltage applied. When the voltage is lower than the threshold voltage, then the transistor is in off-state and no current flows. On the other hand, when the voltage is higher than the threshold voltage, then the transistor is in on-state and current flows from the source to the drain. This makes the SI1021R-T1-GE3 ideal for switching applications as it can be used to quickly turn a load on or off.Conclusion
The SI1021R-T1-GE3 is a single N-Channel MOSFET that is designed to provide reliable switching performance with low on-resistance and low threshold voltage. This makes it ideal for delivering stable and efficient power control in circuit designs. It is the perfect switch for automotive and portable power systems, such as electric vehicles, and can also be used in industrial automation and communications systems. Additionally, it can be used for powering high-performance CPUs and video cards in desktop and laptop computer systems as well as for chargers and LED lighting applications.The specific data is subject to PDF, and the above content is for reference
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