SI1026X-T1-E3 Allicdata Electronics

SI1026X-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI1026X-T1-E3TR-ND

Manufacturer Part#:

SI1026X-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 60V 0.305A SOT563F
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Su...
DataSheet: SI1026X-T1-E3 datasheetSI1026X-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI1026
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1026X-T1-E3 is an advanced power MOSFET array designed to provide superior performance in a wide range of applications. This transistor array has a wide variety of uses, ranging from linear power supplies to motor control. The SI1026X-T1-E3 is a versatile and reliable device, capable of delivering high performance and reliability.

The array flip-chip is composed of four N-channel power MOSFETs that are electrically isolated from each other and operate in the TO-262 package. The array\'s large gate width enables high drain current ratings and low on-resistance values up to 8V. The array is extremely power-efficient and its low input capacitance ensures a high switching speed. The four N-channel MOSFETs are designed to operate in a common source configuration and can be used the same as a single device.

The SI1026X-T1-E3 is particularly suitable for applications requiring high switching speed and low power consumption. Its low input capacitance enables the device to switch at high frequencies and its low power consumption results in improved efficiency. The device is also stable over a wide range of input voltages and temperatures, and it exhibits low electromagnetic interference (EMI).

The SI1026X-T1-E3 operates on the principle of combined body diode and drain-source resistance to regulate the current flow. The body diode acts as a path for current in one direction while the drain-source resistance limits current in the other direction. In addition, the device\'s gate–source threshold voltage ensures that the device can only be turned on when there is an appropriate gate–source voltage across it. This mechanism is able to protect the device from high voltage/current surges.

The variety of applications of the SI1026X-T1-E3 makes it an ideal choice for a wide range of applications. It is suitable for use in motor control, linear power supplies, switching power supplies, automotive applications, and many other applications. In addition, the device is highly reliable, making it a preferred choice for demanding applications that require high power, switching speed, and efficiency.

The SI1026X-T1-E3 is an advanced device with many benefits that make it an ideal choice for a wide range of applications. Its high switching speed and low power consumption ensure that it can be used in even the most demanding applications. In addition, its wide range of uses make it an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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