SI1016X-T1-GE3 Allicdata Electronics

SI1016X-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SI1016X-T1-GE3TR-ND

Manufacturer Part#:

SI1016X-T1-GE3

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V SC89-6
More Detail: Mosfet Array N and P-Channel 20V 485mA, 370mA 250m...
DataSheet: SI1016X-T1-GE3 datasheetSI1016X-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.13000
10 +: $ 0.12610
100 +: $ 0.12350
1000 +: $ 0.12090
10000 +: $ 0.11700
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: SI1016
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI1016X-T1-GE3 is an isolated gate FET (insulated-gate field-effect transistor) with enhanced low dropout voltage and low on-state resistance. It is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that consists of one or more FETs (field-effect transistors) connected in an array to enhance the overall performance. The isolation between each FET reduces noise, reduces the risk of electrical overload, and improves the long-term reliability of the device.

The SI1016X-T1-GE3 has a wide range of applications, including automotive, industrial, medical, and military. It is most commonly used in power switching applications, where its superior performance is beneficial. It can be used in systems that require low dropout voltage and low on-state resistance, such as power supplies and switching power converters. It can also be used in systems that require high-frequency operation and minimal dissipation of power.

The working principle of the SI1016X-T1-GE3 involves the control of current through the FETs based on a gate voltage. When a voltage is applied to the gate, the FETs are turned on and allow current to flow between the source and drain. When the gate voltage is removed, the FETs are turned off and current is blocked from flowing. This process allows the SI1016X-T1-GE3 to be used for controlling and switching currents in various systems.

The SI1016X-T1-GE3 has been designed with a variety of features to ensure it meets the requirement of a wide range of applications. The device features low on-state resistance and a low dropout voltage to reduce power loss and improve efficiency. In addition, the FETs have a high-frequency operation capability to allow for higher switching frequencies. The device also has a wide temperature range, making it suitable for a wide range of environments.

The SI1016X-T1-GE3 provides a reliable and efficient solution for a variety of applications, from automotive to military. It provides robust performance and reliability, with low on-state resistance, low dropout voltage, and high-frequency operation. Its array configuration reduces noise and enhances long-term reliability. Its wide temperature range makes it suitable for a range of environments and applications, making it a versatile and cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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