SI8416DB-T2-E1 Discrete Semiconductor Products

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The SI8416DB-T2-E1 is a single N-Channel 120 mΩ ( max) drain source MOSFET. This device is based on the latest advanced planar MOSFET technology that is suitable for high-frequency switching applications, such as DC-to-DC converters, power electronic circuits, and DC-to-light dimmer circuits. As one of the key components in switch mode power supplies, the SI8416DB-T2-E1 offers superior on-state resistance due to its higher level of optimization.

On-state resistance is an important characteristic of MOSFETs, which is why SI8416DB-T2-E1 is so popular with power system designers. This device is able to provide good on-state resistance due to its high-voltage process optimization, which allows for higher voltage tolerance. Additionally, the device features a low parasitic capacitance, which is beneficial in reducing switching losses.

In addition to its superior on-state resistance, the SI8416DB-T2-E1 is also known for its low gate charge. The low gate charge reduces gate capacitance, which helps reduce energy dissipation during switching, further reducing power losses. With the low gate charge and the superior on-state resistance, the SI8416DB-T2-E1 also provides superior switching performance, reducing switching delays.

In terms of its application field, the SI8416DB-T2-E1 is mainly used for power switching applications in power management circuits. Furthermore, the device is easily integrated into existing designs, making it an ideal choice for designers who need to make modifications to existing power systems. Additionally, the SI8416DB-T2-E1 is also widely used in the automotive industry, where its durable on-state resistance allows it to withstand the harsh conditions of the environment without compromising performance.

The SI8416DB-T2-E1 works by attempting to reach its maximum on-state resistance value, while minimizing the losses associated with switching. To do this, the device\'s body diode is used as the primary means of controlling the on-state resistance. The body diode allows a greater current to flow into the device under high-voltage conditions, which helps minimize the on-state resistance. Additionally, the device\'s internal Zener diode prevents excessive voltage from entering the device under high-voltage conditions, reducing the risk of damage to the device.

In summary, the SI8416DB-T2-E1 is a single N-Channel 120 mΩ (max) drain source MOSFET that is suitable for high-frequency switching applications, such as DC-to-DC converters, power electronic circuits, and DC-to-light dimmer circuits. The device is able to provide excellent on-state resistance due to its high-voltage process optimization, resulting in superior switching performance. Furthermore, the device\'s low gate charge reduces gate capacitance, which minimizes energy dissipation during switching. The SI8416DB-T2-E1 is primarily used for power switching applications in power management circuits and automotive applications.

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