
Allicdata Part #: | SI8435DB-T1-E1TR-ND |
Manufacturer Part#: |
SI8435DB-T1-E1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 10A 2X2 4-MFP |
More Detail: | P-Channel 20V 10A (Tc) 2.78W (Ta), 6.25W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 4-XFBGA, CSPBGA |
Supplier Device Package: | 4-Microfoot |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.78W (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 10V |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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IntroductionThe SI8435DB-T1-E1 is an N-channel enhancement-mode field-effect transistor (FET) with ultra-low-threshold voltage, low-gate charge, and independent gate, drain and source pins. It is specifically designed for applications requiring high speed and low loss. The specific application fields and working principle of the SI8435DB-T1-E1 will be discussed in detail in this article.Application FieldThe SI8435DB-T1-E1 is used in a wide range of applications such as high-speed power amplifier, high-speed switching device, and gate driver. It is particularly suitable for applications where low-threshold voltage and low-gate charge are essential. Its small form factor and low power consumption also make it ideal for applications where board space and power consumption are limited.The SI8435DB-T1-E1 is also ideal for switching applications due to its fast and low-loss characteristics. It is commonly used in digital logic circuits, DC/DC converters, motor controls, and high-speed logic bridges.Working PrincipleThe SI8435DB-T1-E1 is an enhancement-mode FET with three pins: gate, drain, and source. The gate pin is where the voltage is applied to turn the device on and off. The drain is the output pin and the source is the input pin.When a positive voltage is applied to the gate pin, the device will turn on and the current will flow from the drain to the source. As the voltage on the gate increases, the device will become more conductive and more current will flow.When the voltage on the gate is lowered, the device will turn off and no current will flow. The turn-off time is determined by the capacitance of the gate-drain-source structure and the amount of charge stored on the gate. The turn-off time can range from a few nanoseconds up to several microseconds.ConclusionThe SI8435DB-T1-E1 is a versatile and efficient N-channel enhancement-mode field-effect transistor that offers fast switching and low-loss performance. Its ultra-low-threshold voltage, low-gate charge, and independent gate, drain and source pins make it ideal for a wide range of applications, including high-speed power amplifiers, high-speed switching, and gate drivers. Its working principle is based on the use of a voltage applied to the gate to turn the device on and off.
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