SI8475EDB-T1-E1

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The SI8475EDB-T1-E1 is a type of electronics part from the family of transistors and field effect transistors (FETs) specifically in the Single type of MOSFETs.

FETs, sometimes referred to as unipolar transistors, are active devices capable of amplifying current and turning it on or off depending on the voltage applied. MOSFETs are a type of FET and are specifically transistors that operate in a field effect environment. As opposed to a bipolar junction transistor, MOSFETs have higher impedance between their Gate and Source terminals as well as a broad range of dynamic resistance. As a result, they are often used in applications where speed and efficiency are important.

The SI8475EDB-T1-E1 specifically is a Surface Mount MOSFET designed for general, low power switching and amplifier application. It is capable of operating on a maximum voltage of 5V, a maximum current of 100mA, and can support up to a 5pF capacitive load. It has a maximum Gate charge of 3nC and an On resistance of 3.2Ω while still providing a Drain current of 9.7mA.

The working principle of the SI8475EDB-T1-E1 is based off of FET and specifically MOSFET operating principles. FETs and MOSFETs are able to control the flow of current by applying a voltage to their Gate terminal, resulting in a change in the resistance between their Source and Drain terminals. When the Gate voltage is low, the FET or MOSFET acts as an open switch, allowing current to pass through the Source and Drain with little resistance. However, when the Gate voltage is increased, the MOSFET acts as a closed switch, essentially blocking current from passing through.

Due to its low voltage and current rating as well as its Gate charge and on resistance values, the SI8475EDB-T1-E1 is perfect for low power amplifier and switching applications, making it ideal for use in low voltage electronic circuits. Many applications such as amplifiers, power management, siren and sound generators, LED lighting and other low power devices can benefit from using this device.

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