SI8499DB-T2-E1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI8499DB-T2-E1 is a single n-channel enhancement-mode gate-protected field-effect transistor (Power MOSFET). With the latest developments in semiconductor production, devices like the SI8499DB-T2-E1 have become consistently able to deliver significant power and greatly improved performance. It is suitable for use in applications from low to medium voltage (up to 25V) and frequencies up to 500MHz.

The device is also known as a MOSFET, or a metal oxide semiconductor FET. It is a type of transistor which is commonly used to amplify or switch electronic signals. A MOSFET works by controlling the amount of charge by using the electrostatic field created by voltage. It works on the basis of the \'gate effect\': an electric field applied to a semiconductor material changes the conductive properties of the material.

The significant advantages of the SI8499DB-T2-E1 are its extremely low on-state resistance and integrated protection. The device has a low on-state resistance (RDS(on)) of less than 7mΩ, which is significantly lower than most other power MOSFETs. This low resistance allows it to be used in a variety of power switching applications as it reduces conduction losses by shunting current away from the load.

The SI8499DB-T2-E1 also has two integrated safeguards: integrated reverse-bias drain-to-source breakdown voltage protection and gate source ESD protection. The device\'s reverse-bias drain-to-source breakdown voltage protection prevents damage by ensuring the current flowing through the drain-to-source channel can not exceed a predetermined threshold. The gate-source ESD protection prevents damage from electrostatic discharges by limiting the gate-source voltage.

In addition, the SI8499DB-T2-E1 has an extremely fast switching time of less than 10ns. This allows it to quickly switch from on to off, resulting in improved performance and responsiveness. As well as this, the device has a low threshold voltage of approximately 2V, meaning it can be accurately operated at low voltages.

The SI8499DB-T2-E1 is an ideal choice for a variety of applications, ranging from high-frequency switching applications in consumer electronics to high and low-side power switch circuits in automotive powertrain control systems and solar inverters. Its high frequency switching capabilities are particularly useful in applications such as switching power converters, motor control circuits, and power-line communication systems.

In conclusion, the SI8499DB-T2-E1 is an advanced single n-channel enhancement-mode gate-protected MOSFET which is capable of delivering significant power and performance with high efficiency. It is suitable for use in a variety of applications, from consumer electronics to automotive powertrain control systems. The integrated protection and low on-state resistance make it a versatile and reliable power switching solution. The fast switching time further ensures improved responsiveness and performance.

The specific data is subject to PDF, and the above content is for reference