SIHS36N50D-E3 Allicdata Electronics
Allicdata Part #:

SIHS36N50D-E3-ND

Manufacturer Part#:

SIHS36N50D-E3

Price: $ 5.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 36A SUPER-247
More Detail: N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUP...
DataSheet: SIHS36N50D-E3 datasheetSIHS36N50D-E3 Datasheet/PDF
Quantity: 490
1 +: $ 5.06520
10 +: $ 4.55742
100 +: $ 3.74718
500 +: $ 3.13951
1000 +: $ 2.73440
Stock 490Can Ship Immediately
$ 5.57
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: SUPER-247 (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHS36N50D-E3 is an enhancement-mode power MOSFET. It belongs to a category of transistors known as Field Effect Transistors (FETs) and more specifically MOSFETs (Metal Oxide Semiconductor FETs). MOSFETs are divided into n-channel and p-channel types. The SIHS36N50D-E3 is an n-channel MOSFET. As a single component, it is capable of being operated in both enhancement and depletion modes. The device is used primarily in applications such as load switches and power management.

The SIHS36N50D-E3 features an incredibly low RDS(on) value. This means it operates with very low on-state resistance, providing superior performance but at the same time a very low power dissipation. It also has a low gate charge, which can reduce switching losses during operation. The die is compliant to RoHS and the extremely small package size makes it the ideal choice for space-constrained applications.

In terms of its working principle, the SIHS36N50D-E3 is a single MOSFET that is made up of a combination of elements or paths. These elements and paths create an electric field from the gate to the source. When a certain voltage is applied to the gate, this electric field will induce a flow of current from the source to the drain. This current flow can be controlled by the applied voltage. In other words, the higher the voltage, the higher the current flow.

At the same time, once the MOSFET is turned off, the current will stop flowing. This is because the electric field that is induced by the gate is no longer in effect. As a result, the flow of current is reduced to near zero. This is why MOSFETs are ideal for use in load switching applications, as they can turn circuits on and off in a controllable manner.

The SIHS36N50D-E3 is a low-power MOSFET that is suitable for applications such as Load Switches, Motor Control, Lighting Control, and Battery Management, to name a few. In order to optimize the performance of these devices, it is important to consider the packages and ratings as well as the operating conditions available to them. These components can be used to control the movement of power and are key components for providing efficient power management and optimization of performance in current designs.

The specific data is subject to PDF, and the above content is for reference

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