SIHS90N65E-E3

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The SIHS90N65E-E3 is a high-power silicon insulated gate bipolar transistor (IGBT) ideal for use in a variety of applications. It uses a vertical structure with low gate control voltage, fast switching speed and low internal losses. As a result, this transistor can be used for a wide range of applications such as in power supplies, motor control, lighting and renewable energy.

The SIHS90N65E-E3 is ideal for high power applications in motor control, for example in AC servo motors, induction motors, permanent magnet motors and DC brushed motors. It is also suitable for high-voltage and high-current inverter applications, such as photovoltaic inverters, UPS, aviation and other industrial applications. Additionally, it can be used in AC and DC lighting control systems, in infrastructure and traffic engineering, as well as other high- voltage and high-power applications.

This MOSFET is available in a standard TO-220 package and has a current rating of 90A and a maximum drain-source voltage of 650V. The SIHS90N65E-E3 has a fast switching speed, a low gate threshold voltage and a low internal inversion voltage. It has a maximum storage temperature of 125°C and a maximum junction temperature of 175°C.

The working principle of the SIHS90N65E-E3 is based on the interaction between an insulated gate and a main electrode. This interaction is then used to control the switching of the electrical current from source through drain. The insulated gate is connected to the gate terminal. When a voltage is applied to this terminal, an electric field is created between the main electrode and the insulated gate, which allows for the control of electrical current. When the gate voltage reaches the IGBT threshold voltage, the transistor is triggered and the current flows freely from the source to the drain. The transistor can then be switched off by lowering the gate voltage below the threshold voltage. Depending on the current drain and the applied voltage, the insulated gate can switch very fast while minimizing losses.

In conclusion, the SIHS90N65E-E3 is an ideal MOSFET for power and motor control applications due to its fast switching speed and low gate control voltage. It is also suitable for a wide range of high-voltage and high-power applications and can be used in a wide variety of industries including renewable energy, aviation and infrastructure engineering.

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