| Allicdata Part #: | SIHW70N60EF-GE3-ND |
| Manufacturer Part#: |
SIHW70N60EF-GE3 |
| Price: | $ 6.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 70A TO-247AD |
| More Detail: | N-Channel 600V 70A (Tc) 520W (Tc) Through Hole TO-... |
| DataSheet: | SIHW70N60EF-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 480 +: | $ 6.10786 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 38 mOhm @ 35A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHW70N60EF-GE3 is a power field-effect transistor (FET) of the insulated-gate bipolar transistor (IGBT) type, a type of semiconductor. It is also referred to as an enhancement mode enhancement mode InGaP-HBT MOSFET (metal-oxide semiconductor field-effect transistor) or a power transistor. It has a single-ended low side structure, making it well-suited for use in applications such as motor control and power switching.
This device is designed with an N-channel MOSFET for the high side switch, and a vertical power P-channel FET for the low side switch. It combines the logic-level turn-on benefit of an MOSFET with the ability to handle higher currents than an MOSFET alone. This enables the device to deliver higher power levels while maintaining high efficiency and simple gate drive characteristics.
The SIHW70N60EF-GE3 offers a wide operating temperature range, ranging from –55°C to 150°C. It also supports a range of gate drive inputs, at voltages between 5V and 20V. The device has a low on-state resistance (RDS(on)) rating of 16.56 milliohms, which provides efficient power transfer and low power dissipation.
The working principle of the SIHW70N60EF-GE3 is simple. It switches on or off power to the load depending on the voltage applied to its gate. When the gate voltage is low, the device is ‘OFF’ and the load is disconnected from the power source. When the gate voltage is high, the device is ‘ON’, and the load is connected to the power source. The device can be switched on and off quickly, without the need for a delay or time lag.
The SIHW70N60EF-GE3 is used in a wide range of applications where high power efficiency and low power consumption are important. It is frequently used in motor control, power switching, and power management systems, as well as in consumer appliances, computers, lighting and security systems. The device is also suitable for use in automotive, industrial, and aerospace applications.
The SIHW70N60EF-GE3 is an ideal power switching device, due to its high power efficiency, low on-state resistance, and fast switching times. It is a reliable and cost-effective choice for applications requiring reliable power switching and management.
The specific data is subject to PDF, and the above content is for reference
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SIHW70N60EF-GE3 Datasheet/PDF