| Allicdata Part #: | SIHW73N60E-GE3-ND |
| Manufacturer Part#: |
SIHW73N60E-GE3 |
| Price: | $ 5.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 73A TO-247AD |
| More Detail: | N-Channel 600V 73A (Tc) 520W (Tc) Through Hole TO-... |
| DataSheet: |  SIHW73N60E-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 4.58544 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7700pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 362nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 36A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHW73N60E-GE3 is a silicon carbide, insulated gate bipolar transistor (IGBT). It is designed to provide a combination of high voltage, low on-resistance, and low switching losses. This makes it suitable for applications such as motor drives, UPS, AC/DC converters, and welding. It is a single, n-channel device with a low on-resistance of 9.7mΩ, at a turn-on voltage of only 7.3V.
The SIHW73N60E-GE3 is a three-terminal device that consists of two p-channel MOSFETS in a cascode configuration. The IGBT has an anode terminal and a cathode terminal for switching and the gate terminal is used to control the device. The gate → anode terminal voltage range is rated 7.3V (minimum) to 600V (maximum) while the collector → emitter voltage rating is 600V (maximum).
The device works by combining the fast switching speeds of an MOSFET with the high-voltage capabilities of a BJT (bipolar junction transistor). When a positive voltage is applied to the Gate terminal, the p-channel MOSFET turns on, allowing current to flow from the Anode to the Collector. This in turn causes the BJT to turn on, allowing current to flow from the Collector to the Emitter. As the gate voltage is reduced, the current flow through the transistor is reduced, and eventually the transistor is turned off.
The low on-resistance and gate voltage turn-on characteristics of the SIHW73N60E-GE3 make it ideal for use in applications such as motor drives, UPS, AC/DC converters, and welding. It is also suitable for use in power conversion, lighting, and audio applications. Furthermore, its low switching losses make it very efficient when used in high-current applications.
The SIHW73N60E-GE3 is a reliable, low-cost device that offers excellent performance in a wide range of applications. It is an ideal choice for those looking for a high-voltage, low on-resistance IGBT with low switching losses.
The specific data is subject to PDF, and the above content is for reference
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