| Allicdata Part #: | SIJA54DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SIJA54DP-T1-GE3 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 60A PPAK SO-8L |
| More Detail: | N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount Po... |
| DataSheet: |  SIJA54DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.32458 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 36.7W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5300pF @ 20V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.35 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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.The SIJA54DP-T1-GE3 is a single, N-channel MOSFET with a Dual Common Source configuration. It is designed for use as an electronic switch, allowing high-speed signal transmission through a conductive medium. It has been designed to meet the requirements of the automotive industry, providing high performance, reliability and flexibility.
The SIJA54DP-T1-GE3 is based on a depletion-mode MOSFET, which is a type of transistor that relies on depletion of the source. A depletion-mode MOSFET can be used as an electronic switch by controlling the voltage applied to the gate terminal. When no voltage is applied, the device is in the OFF-state; when a voltage is applied, the device is in the ON-state.
The gate terminal of the device is protected from high voltage spikes with a zener diode. This prevents damage to the device caused by excessive voltage. The SIJA54DP-T1-GE3 is also protected from thermal runaway, a condition in which increased temperatures in the device lead to increased current, leading to further temperature increases. This is prevented by the design of the device itself, combined with the use of a thermal fuse in the device.
The SIJA54DP-T1-GE3 can be used in a variety of applications due to its high performance characteristics. It is rated for a drain-source voltage of 20V and a maximum current of 8A. It is designed for high speed switching applications, with a minimum off-state response time of 10ns and maximum turn-on time of 25µs. This makes it ideal for high-speed switching applications such as pulse width modulation and digital control.
The SIJA54DP-T1-GE3 is also suitable for use in automotive applications. It is rated for a temperature range of -40°C to 125°C, making it suitable for use in harsh environmental conditions. It is also designed for high current and voltage applications, with a maximum drain-source resistance of 25Ω. This makes it suitable for use in applications such as engine control and lighting control.
The SIJA54DP-T1-GE3 is designed to provide high performance, reliability and flexibility. It is ideal for use in automotive, industrial and commercial applications, where reliability, high performance and flexibility are required. With its high performance characteristics, it is an excellent choice for applications requiring a high level of reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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