Allicdata Part #: | SIJA58DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIJA58DP-T1-GE3 |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 60A POWERPAKSO-8 |
More Detail: | N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount Po... |
DataSheet: | SIJA58DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29719 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 27.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 20V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 2.65 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIJA58DP-T1-GE3 is a common and versatile transistor type, typically used in a variety of electronic applications. It is a single power-type transistor, known as an FET (Field-Effect Transistor). This type of transistor is characterized by its strongly non-linear characteristics managing among other functions, amplifying, switching, gating and voltage regulation.
These transistors are used for a wide range of design applications, including low-power audio amplifiers, switching devices, medical implants, and data transmission. Popular for its high level of power efficiency and its low operating voltage, the SIJA58DP-T1-GE3 provides valuable performance when it comes to applications that require low-power inputs, durability and reliability.
The SIJA58DP-T1-GE3 is a single, n-channel enhancement-mode FET, made of silicon. Usually considered a low-voltage type, this transistor uses a n-channel type depletion-mode semiconductor process and includes a N-type Gate (well) region and a separate P-type Source and Drain regions. When a small current is applied to the NTC gate (negative-temperature coefficient), the drain current is enabled or (depending on the type of transistor) disabled, resulting in a change of overall resistance at the drain/source.
The SIJA58DP-T1-GE3 is a very versatile transistor. In use for a variety of applications, its low-power and low-voltage requirements make it an ideal choice for building a robust circuit. In addition, its capability of high-frequency operation is beneficial when high-speed operation is required.
The SIJA58DP-T1-GE3 is an ideal choice for applications that require high-speed data transmission. Due to its fast switching speed and delicate structure, it is frequently used in communications and modems for speedy transmission of data. In addition, its high-performance level makes it desirable for use in a variety of designs.
The SIJA58DP-T1-GE3 is also able to handle volatile loads, making it suitable for usage in high-speed switching power supplies. Its extraordinarily low voltage requirements allow it to be used in portable devices, like personal electronics, making it an ideal choice for long-term reliability. This efficiency along with its low-noise levels make it a valuable choice for high-quality output.
This transistor is used in a variety of different applications and is considered a reliable, low-power device. It offers a variety of benefits and a low total power consumption. The SIJA58DP-T1-GE3 is a great choice for a wide range of applications and its low-power, low-voltage operation is well-suited for most applications.
The specific data is subject to PDF, and the above content is for reference
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