SIJA58DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIJA58DP-T1-GE3TR-ND

Manufacturer Part#:

SIJA58DP-T1-GE3

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 60A POWERPAKSO-8
More Detail: N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount Po...
DataSheet: SIJA58DP-T1-GE3 datasheetSIJA58DP-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.29719
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIJA58DP-T1-GE3 is a common and versatile transistor type, typically used in a variety of electronic applications. It is a single power-type transistor, known as an FET (Field-Effect Transistor). This type of transistor is characterized by its strongly non-linear characteristics managing among other functions, amplifying, switching, gating and voltage regulation.

These transistors are used for a wide range of design applications, including low-power audio amplifiers, switching devices, medical implants, and data transmission. Popular for its high level of power efficiency and its low operating voltage, the SIJA58DP-T1-GE3 provides valuable performance when it comes to applications that require low-power inputs, durability and reliability.

The SIJA58DP-T1-GE3 is a single, n-channel enhancement-mode FET, made of silicon. Usually considered a low-voltage type, this transistor uses a n-channel type depletion-mode semiconductor process and includes a N-type Gate (well) region and a separate P-type Source and Drain regions. When a small current is applied to the NTC gate (negative-temperature coefficient), the drain current is enabled or (depending on the type of transistor) disabled, resulting in a change of overall resistance at the drain/source.

The SIJA58DP-T1-GE3 is a very versatile transistor. In use for a variety of applications, its low-power and low-voltage requirements make it an ideal choice for building a robust circuit. In addition, its capability of high-frequency operation is beneficial when high-speed operation is required.

The SIJA58DP-T1-GE3 is an ideal choice for applications that require high-speed data transmission. Due to its fast switching speed and delicate structure, it is frequently used in communications and modems for speedy transmission of data. In addition, its high-performance level makes it desirable for use in a variety of designs.

The SIJA58DP-T1-GE3 is also able to handle volatile loads, making it suitable for usage in high-speed switching power supplies. Its extraordinarily low voltage requirements allow it to be used in portable devices, like personal electronics, making it an ideal choice for long-term reliability. This efficiency along with its low-noise levels make it a valuable choice for high-quality output.

This transistor is used in a variety of different applications and is considered a reliable, low-power device. It offers a variety of benefits and a low total power consumption. The SIJA58DP-T1-GE3 is a great choice for a wide range of applications and its low-power, low-voltage operation is well-suited for most applications.

The specific data is subject to PDF, and the above content is for reference

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