SIR774DP-T1-GE3

Series:	*
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Vgs (Max):	±20V

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The SIR774DP-T1-GE3 is an ESD-protected low Qg n-channel Enhancement Mode Field-Effect Transistor (EOFET). It is designed to have a low on-state resistance, a low gate charge, and fast switching characteristics. It has a very wide variety of applications from low-frequency power switches to high-speed RF switches and amplifiers.The SIR774DP-T1-GE3 has a Drain to Source off-state breakdown voltage of at least 20V. The device is rated for currents up to 4A and the threshold voltage for turn-on is typically -4V. It also has a specified thermal resistance of 0.11°C/W and a maximum junction temperature of +175°C. In addition, the device has a low capacitance of 0.58 pF and a maximum device capacitance of 20pF.The SIR774DP-T1-GE3 is designed to operate with a low Gate-Source leakage current, typically around 100nA. This low leakage current allows it to be used in low-power switching applications. It is also designed to operate with a low quiescent current of less than 2mA.The SIR774DP-T1-GE3 works by using an enhancement mode of operation. This means that the channel is not formed until a positive Gate-Source voltage is applied. When the Gate-Source voltage is increased, the channel forms, causing current to flow from Source to Drain. As the Gate-Source voltage is increased further, the conduction between the drain and the source becomes more efficient as the channel forming region increases. The conduction in the channel occurs more efficiently at higher Gate-Source voltages and this increases the current flow from Source to Drain.The low on-state resistance of the SIR774DP-T1-GE3 makes it suitable for use in the implementation of high-speed switching circuits. The low gate charge and the fast switching characteristics of the device make it suitable for use in applications such as low-frequency power switches, high-speed RF switches, and amplifiers.The SIR774DP-T1-GE3 can be used in a wide variety of applications such as power switching, RF switching, and amplifiers. It is suitable for use in low-frequency and high-speed circuits. The low on-state resistance, the low gate charge, and the fast switching characteristics of the device make it a good choice for these applications. The device is also ESD-protected, making it suitable for use in high-voltage applications. The SIR774DP-T1-GE3 is a versatile device, with a wide range of applications. It is ideal for low-frequency and high-speed switching circuits, as well as for RF switching and amplifiers. The device is ESD-protected and its low on-state resistance and low gate charge make it suitable for high-speed circuits.

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