SIR798DP-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds:	5050pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.05 Ohm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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The SIR798DP-T1-GE3 is a single high-side power MOSFET designed for use in automotive applications such as body control, engine management, and lighting control. It is a non-polar device that can be used in place of a P-channel MOSFET in a traditional PMOS circuit. This device is ideal for applications in which a high-side driver is required, specifically automotive applications.The SIR798DP-T1-GE3 is based on a vertical DMOS (depletion mode MOSFET) structure, in which the drain voltage is lower than the gate voltage. This allows the device to be used in a wide variety of applications in which negative gate voltages are required. The DMOS structure also enables the device to be used at much higher voltages (up to 500V) than a traditional PMOS MOSFET. Furthermore, the SIR798DP-T1-GE3 has a low On-state resistance (RDS_ON) of 0.4 ohms. This ensures that the device has high efficiency and low power dissipation when used in high-current applications.The SIR798DP-T1-GE3 is well adapted to automotive applications due to its fast turn-on times and low quiescent current. The device can be switched on and off relatively quickly, allowing it to be used in applications that require quick response times, while its low quiescent current helps to prevent power loss when the switch is off. Additionally, the device is protected against short circuit, thermal runaway, and reversed polarity operations, making it a safe and reliable option for automotive use.The SIR798DP-T1-GE3 is typically used in a “high-side” configuration, in which the device is connected between the positive supply of the load and ground. In this application, the device acts as a switch, allowing current to flow from the positive supply to ground when the switch is closed. The application circuit typically includes a control signal that is used to turn the device on and off, as well as other components such as resistors and capacitors to help protect the device and facilitate its operation.In summary, the SIR798DP-T1-GE3 is a high-side power MOSFET designed for use in automotive applications. It is a vertical DMOS device that features a low On-state resistance and a high voltage rating, making it well suited for high-current applications. Additionally, its fast switching speed, low quiescent current, and protection features make it a reliable choice for automotive use.

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