SIRC06DP-T1-GE3 Discrete Semiconductor Products

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The SIRC06DP-T1-GE3 is a field-effect transistor (FET) designed for use in the power industry. It is typically used in power supplies and electronic amplifiers, as well as for motor control and for performing switching functions in low frequency, medium power applications. A FET is an unipolar semiconductor device that consists of a semiconductor channel between a pair of insulated gates, and is used to amplify or switch electrical signals, making it an essential component in a variety of electronic devices.

The SIRC06DP-T1-GE3 is a single MOSFET, meaning it is a FET that uses a single semiconductor channel for operation. It features an n-channel MOSFET design, with a V(DSS) of 30V and an r(dson) of 13.5 mΩ. This transistor has a maximum current rating (I(DSM)) of 28A, and a maximum allowable power dissipation of 53.2 W. It operates over a temperature range of -55 to +175 °C.

The SIRC06DP-T1-GE3 is an enhancement mode FET, meaning that it can pass current in both directions. This is accomplished through the use of an insulated gate, or a very thin layer of material between the transistor\'s source and drain. When a voltage is applied to the gate, it raises the potential barrier allowing current to flow freely through the transistor. When the voltage is removed, the potential barrier returns and the transistor is closed. This allows the FET to be used as a switch, with a given voltage applied to the gate to enable or disable the current flow.

The SIRC06DP-T1-GE3 is commonly used in a variety of applications due to its small size, low on-state resistance, and wide range of voltage and temperature ratings. It is frequently used in power supplies, as its tight control over the electrical flow prevents excessive current draw and ensures efficient operation. It is also used in amplifiers, providing precise control over the audio and video signals, as well as in motor control applications, such as variable speed drives, to switch currents and control speeds accurately.

The SIRC06DP-T1-GE3 is an ideal choice for a variety of electronic applications due to its simple structure and controllability. It is small, efficient, and can operate over a wide range of temperatures and voltages. Its use of a single MOSFET channel allows it to be used in applications requiring precise control over electrical currents, while its low on-state resistance allows it to handle high voltages and current ratings with ease. The SIRC06DP-T1-GE3 is a reliable, cost-effective choice for a wide variety of applications.

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