| Allicdata Part #: | SIRC16DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SIRC16DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 25V 60A POWERPAKSO-8 |
| More Detail: | N-Channel 25V 60A (Tc) 54.3W (Tc) Surface Mount Po... |
| DataSheet: |  SIRC16DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 54.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 10V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 4.5V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 0.96 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIRC16DP-T1-GE3 is an advanced semiconductor device that is used in a wide range of applications. It is a field effect transistor (FET) builtusing MOSFET technology, designed for high voltage and current switching applications.
The SIRC16DP-T1-GE3 is a single n-channel enhancement-mode FET with a very low on-state resistance. It is designed to operate from 20V to 100V, and is able to handle up to 8A of current. The maximum Drain-Source voltage (VDS) is 100V, the maximum Drain-Source on-state resistance is 0.022Ω at VGS=10V, and the typical threshold voltage for the turn-on of the FET is 3 volts.
The SIRC16DP-T1-GE3 is a common-source device which means it is operated in the linear (triode) region. In the linear region, the drain current is proportional to the drain-source voltage and the gate-source voltage. This is in contrast to the saturation (active) region, where the drain current is primarily determined by the gate-source voltage. As a single-channel device, it can be used to control the bi-directional flow of current in a single circuit.
The SIRC16DP-T1-GE3 offers outstanding electrical performance. It has a high transconductance, meaning that it can conduct large amounts of current for its small size. It also has a very high input impedance, making it suitable for driving high-impedance loads. The FET also has a very low output capacitance and can switch fast enough for high frequency applications.
The SIRC16DP-T1-GE3 is used in a variety of applications, including DC-DC converters, motor or solenoid drivers, high voltage power supplies, current regulators, Morse auto-switching, audio amplifier systems, and protection circuits. The device is also often used in switching and power applications where it is beneficial to have low on-resistance and high transconductance.
The SIRC16DP-T1-GE3 is a versatile device that is easy to use and reliable. It offers excellent electrical performance and is suitable for a wide range of applications. The device is also cost-effective, making it a great choice for any project requiring a reliable, high-performance FET.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIRC06DP-T1-GE3 | Vishay Silic... | 0.29 $ | 1000 | MOSFET N-CH 30VN-Channel ... |
| SIRC16DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 60A POWER... |
| SIRC18DP-T1-GE3 | Vishay Silic... | 0.43 $ | 3000 | MOSFET N-CH 30V 60A POWER... |
| SIRC10DP-T1-GE3 | Vishay Silic... | 0.29 $ | 3000 | MOSFET N-CH 30V 60A POWER... |
| SIRC04DP-T1-GE3 | Vishay Silic... | 0.57 $ | 1000 | MOSFET N-CH 30V 60A POWER... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...