| Allicdata Part #: | SIS606BDN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS606BDN-T1-GE3 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHAN 100V POWERPAK 1212 |
| More Detail: | N-Channel 100V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52... |
| DataSheet: |  SIS606BDN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.43615 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1470pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 17.4 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta), 35.3A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIS606BDN-T1-GE3 is a N-channel Enhancement Mode MOSFET designed for high power application in the power management and power conversion sector. N-channel MOSFETs are widely used because of their low cost and high efficiency in power management and power conversion. This device is a rugged, reliable and extremely versatile part in many applications such as hard switching, rectifiers, and motor control.
Application field and working principle
The SIS606BDN-T1-GE3 is suitable for use in power management and power conversion applications such as hard switching, rectifiers, and motor control. This device is an economical and effective choice for power control where a high-efficiency N-channel MOSFET is needed. It offers high current handling capability and operational optimization for power management and power conversion.
The N-channel Enhancement Mode MOSFETs, as the name suggests, are depletion mode transistors that are used to switch bulk loads. They are used in many applications such as motor control, load switching, and AC/DC power converters. The SIS606BDN-T1-GE3 MOSFETs have the advantage of providing high current handling capability, low gate drive voltage, and very low conduction losses.
The SIS606BDN-T1-GE3 MOSFETs operate based on the same principle as other transistors. When there is no current flowing through the transistor, the MOSFET is “off” or in the “off state”. When a voltage is applied to the gate, the MOSFET is in “on” or “on state”, where current will flow through the device. The MOSFET operates in the “on” state when a specified gate voltage (Vgs) is applied to the gate terminal. When the gate voltage drops below the specified gate threshold, the MOSFET is in the “off” state, and the current flows through the MOSFET is zero.
The SIS606BDN-T1-GE3 is a rugged and reliable N-channel MOSFET designed for high power applications. This device boasts an extremely low on-resistance and has excellent thermal characteristics, enabling high power handling capability. The SIS606BDN-T1-GE3 can be used in any application involving a power MOSFET, such as load switching, motor control, or power converters. It is also suitable for a wide variety of audio and video applications.
The SIS606BDN-T1-GE3 is an economical and effective choice for power management and power conversion applications. Its low on-resistance makes it an ideal device for high-efficiency power switching. The N-channel MOSFET’s wide operating temperature range and high breakdown voltage make it suitable for use in industrial and automotive applications. The device’s low gate drive voltage requirements also make it an ideal choice for use in high-voltage applications.
Conclusion
The SIS606BDN-T1-GE3 is an N-channel Enhancement Mode MOSFET designed for high power application in the power management and power conversion sector. This device is suitable for use in many applications such as hard switching, rectifiers, and motor control. It offers high current handling capability and operational optimization for power conversion. The device also has an extremely low on-resistance, excellent thermal characteristics, and wide operating temperature range, enabling high power handling capability. With its low gate drive voltage requirements, it is an ideal choice for use in high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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