| Allicdata Part #: | SIS612EDNT-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS612EDNT-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 50A SMT |
| More Detail: | N-Channel 20V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
| DataSheet: |  SIS612EDNT-T1-GE3 Datasheet/PDF |
| Quantity: | 3000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
| Package / Case: | PowerPAK® 1212-8S |
| Supplier Device Package: | PowerPAK® 1212-8S (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2060pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 14A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SIS612EDNT-T1-GE3 Application Field and Working Principle
The SIS612EDNT-T1-GE3 is a metal-oxide semiconductor field-effect transistor (MOSFET), designed to be operated in a range of applications in both high frequency and high voltage operation. It is an advanced FET technology which can be used in a wide variety of settings and applications including power amplifiers, analog and digital switching, radio frequency (RF) circuit design, and other high-performance areas such as amplifiers and modulators. In this article we will explore the various application fields of the SIS612EDNT-T1-GE3, as well as its working principle.
Application Field of SIS612EDNT-T1-GE3
The SIS612EDNT-T1-GE3 is an N-channel MOSFET which can be used in many different applications. It is ideal for use in power amplifiers, analog and digital switching circuits, and radio frequency (RF) device design. These are just a few of the applications in which the SIS612EDNT-T1-GE3 is usable for.
- Power Amplifiers: The SIS612EDNT-T1-GE3 can be used in power amplifiers to provide a high degree of linearity, low noise, and excellent thermal characteristics. Its superior gain and a wideb range of operations make it well suited for power amplifier design in audio applications, as well as RF and microwave applications.
- Analog and Digital Switching: The SIS612EDNT-T1-GE3 can be utilized in both analog and digital switching applications. Its superior off-pin impedance and low on-resistance provides a high switching speed and low power dissipation, making it ideal for chip-level design.
- Radio Frequency (RF) Device Design: The SIS612EDNT-T1-GE3 can be used in RF device design as a low noise amplifier and mixer, due to its low gate lag, low input capacitance and high transconductance. This makes it ideal for use in sensitive RF applications.
Working Principle of SIS612EDNT-T1-GE3
The working principle of the SIS612EDNT-T1-GE3 is based on the gate-source voltage. Voltage applied to the gate will modulate the width of the conducting channel between the drain and the source. When a positive voltage is applied to the gate, it will increase the width of the conducting channel, resulting in higher current flow between the drain and the source, and vice versa.
The SIS612EDNT-T1-GE3 can be operated in two modes, the depletion mode and the enhancement mode. In the depletion mode, the width of the conducting channel is reduced when a negative voltage is applied to the gate. This decreases the current flow between the drain and the source. The enhancement mode works in the same fashion, but with a positive voltage applied to the gate, and an increase in the width of the conducting channel, and an increase in current flow between the drain and the source.
The SIS612EDNT-T1-GE3 also has a VGS drive strength rating and a maximum rated drain-source voltage. The VGS drive strength rating indicates the amount of voltage applied to the gate that is needed to operate the device in its various modes. The maximum rated drain-source voltage indicates the maximum voltage that the device can safely handle.
Conclusion
The SIS612EDNT-T1-GE3 is a versatile, high performance FET that is suitable for use in a range of different applications. Its superior gain, wide range of operation frequencies, and low gate lag make it an ideal choice for power amplifiers, analog and digital switching circuits, and RF device design. It operates on the principle of gate-source voltage modulation, and can be operated in either depletion or enhancement mode. Because of its superior performance characteristics, the SIS612EDNT-T1-GE3 is a popular choice for use in many different types of projects.
The specific data is subject to PDF, and the above content is for reference
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