Allicdata Part #: | SISC06DN-T1-GE3TR-ND |
Manufacturer Part#: |
SISC06DN-T1-GE3 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V |
More Detail: | N-Channel 30V 27.6A (Ta), 40A (Tc) 3.7W (Ta), 46.3... |
DataSheet: | SISC06DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.27386 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 46.3W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 2455pF @ 15V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27.6A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SISC06DN-T1-GE3 is a semiconductor device, classified as a field-effect transistor (FET). It is a single device, which includes a gate, drain, and source electrode. The device operates as a switch, controlling the flow of current between the drain and source electrodes.
The SISC06DN-T1-GE3 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Its structure includes source and drain regions and a gate oxide layer between these two regions. This oxide layer acts as an electronic switch and modulates the conductivity of the device. The gate voltage controls the drain current, i.e. when the gate voltage increases, the drain current increases linearly. By adjusting the gate voltage, the drain current can be adjusted linearly up to a certain limit. This is known as the drain current-gate voltage (Id-Vg) characteristic.
The SISC06DN-T1-GE3 is widely used in a variety of applications. The device is commonly used in analog circuits, such as amplifiers and buffers; digital circuits, such as logic gates; and power control circuits, such as motor drivers and switching regulators. The device offers high scalability, low power consumption, and high speed operation. This makes it a suitable choice for a wide range of applications.
In terms of its working principle, the SISC06DN-T1-GE3 operates on the principle of field effect. This principle is based on the fact that the gate voltage is used to control the flow of current between the drain and source. The device is constructed using a number of discrete materials and processes, which effectively creates an electric field between the source and drain. By carefully controlling the electric field, the SISC06DN-T1-GE3 is able to modulate the conductivity of its channel and thereby control current flow.
In conclusion, the SISC06DN-T1-GE3 is a single terminal MOSFET device, which offers high scalability, low power consumption and high speed operation. The device works on the principle of field effect, wherein the gate voltage is used to control the flow of current between the drain and source. The device is widely used in a variety of applications, such as analog circuits, digital circuits, and power control circuits.
The specific data is subject to PDF, and the above content is for reference
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