SISC29N20DX1SA1

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The SISC29N20DX1SA1 is a single N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This particular type is designed as a Power MOSFET, meaning that it’s suitable for use in applications needing high-power capacity and current handling capabilities. Its intended use is for high-voltage, low-side switching, including the powering and controlling of fluorescent lamps, AC induction motors, and power supplies.

A MOSFET is a three-terminal field effect transistor that has an insulated gate. Most power MOSFETs are voltage-dependent; therefore a gate voltage is used to control the channel depth. The channel depth determines the size of the electrical current that can pass from the source to the drain terminals. The highest available voltage for the SISC29N20DX1SA1 is up to 500 V for unclamped inductive loads. It also offers a low threshold gate voltage and short-circuit capability.

The SISC29N20DX1SA1 is designed with a low on-resistance of 0.042 Ω. This low on-resistance allows it to switch with ease. When the MOSFET is on, it acts like a perfect conductor, creating a low voltage drop between the source and the drain. This power MOSFET also has an excellent electrical noise rejection of 64dBµVrms at 410 Hz, thanks to its internal source-source resistor.

The SISC29N20DX1SA1 is especially suitable for use in automotive applications that require step-down converters, LED lighting and electromagnetic actuators. It is also the perfect choice for high-side switching applications such as automotive HVAC systems.

When using a MOSFET for power switching, the two most important considerations are the drain-source voltage and the drain current. The SISC29N20DX1SA1 can handle drain-source voltage from 25 V to 500 V and drain currents from -60A to +60A. It also features a superior heat dissipation capability with no external heat sink required.

The SISC29N20DX1SA1 is designed to simplify and reduce the power switching design process, allowing engineers to control and regulate currents quickly and efficiently. Its low on-resistance combined with the short-circuit capability makes it a preferred choice for high-power applications.

The SISC29N20DX1SA1 is designed to help engineers achieve the best power efficiency in their power-switching designs. Its superior power and noise immunity capabilities make this MOSFET an ideal choice for a wide range of power-switching applications. Whether it’s controlling the brightness of LED lights, operating an AC motor, or regulating a power supply, the SISC29N20DX1SA1 is the perfect choice for performing these tasks with ease.

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