
SIUD403ED-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIUD403ED-T1-GE3TR-ND |
Manufacturer Part#: |
SIUD403ED-T1-GE3 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 500MA PWRPAK0806 |
More Detail: | P-Channel 20V 500mA (Ta) 1.25W (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 6000 |
3000 +: | $ 0.04433 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | PowerPAK® 0806 |
Supplier Device Package: | PowerPAK® 0806 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 31pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 4.5V |
Series: | TrenchFET® Gen III |
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 300mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIUD403ED-T1-GE3 is a single-channel MOSFET transistor produced by STMicroelectronics. This emerging technology offers higher performance and lower power consumption than conventional transistors. It has a unique profile and stands as one of the top performing III-V MOSFETs available in the market.
The main application field of the transistor lies in the power electronics field. This includes the use of the transistor to increase the efficiency and power of electronic equipment. It is a great tool to increase power delivery and reduce energy losses in power conversion and transfer.
The MOSFET transistor is also used in high speed communication devices, motor control, storage systems, and digital logic applications. The device has a low gate resistance and low power consumption, making it highly efficient for these types of applications. It is also used in the field of robotics, where it can operate as a motor controller and provide precise control of movement.
The working principle of the SIUD403ED-T1-GE3 is based on the principle of metal oxide semiconductor field effect transistors, which are increasingly being developed to improve the performance of electronic devices. The transistor works by using high-temperature silicon material along with an optimized protective layer to reduce contact thermal impedance. By applying a high voltage to the gate terminal of the transistor, the positive or negative electrical field creates an electric field effect, which causes a current of electrons to flow from the source to the drain terminal.
The SIUD403ED-T1-GE3 is designed to be highly efficient and reliable, offering improved performance over traditional transistors. The device is comprised of a high and low side vertical power FET, with optimized thermal and electrical characteristics. The transistor also features a wide technology process, integrated thermal protection, and optimized gate control.
The SIUD403ED-T1-GE3 is an excellent choice for applications that require higher performance and power efficiency, such as those found in power electronics. The device has also been utilized in many different types of logic applications, such as robotics, high speed communication devices, and storage systems. It has a low gate resistance and low power consumption, making it highly efficient and reliable for these types of applications.
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