
Allicdata Part #: | SIUD412ED-T1-GE3TR-ND |
Manufacturer Part#: |
SIUD412ED-T1-GE3 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 12V 500MA PWRPAK0806 |
More Detail: | N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.04733 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | PowerPAK® 0806 |
Supplier Device Package: | PowerPAK® 0806 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21pF @ 6V |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 0.71nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 340 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A Field Effect Transistor (FET) is a type of transistor that operates on a voltage controlled current source. The SIUD412ED-T1-GE3 is an N-channel enhancement mode Field Effect Transistor specifically designed for digital switching applications. It is an optimal choice for high frequency switching applications, where the current transfers are pushed to their limits.
The SIUD412ED-T1-GE3 is a medium voltage device, featuring low power consumption and low gate charge (Qg). It allows for the design of highly efficient circuits in a small package, with a wide range of current ratings. It also features an extended RDS(on) range, which makes it well-suited for applications where peak performance is essential.
In general, the SIUD412ED-T1-GE3\'s working principle is quite simple. In enhancement mode operation, an external voltage is applied across the gate-drain and gate-source terminals, allowing electrons to flow between the drain and source terminals. This flow of electrons is a function of voltage applied across the gate-source and gate-drain terminals, and the current will be modulated by the magnitude of this voltage. As this voltage is increased, more electrons flow and more current is able to pass through the device.
Because of its simple operation, the SIUD412ED-T1-GE3 is an ideal choice for digital switching applications. This transistor can be used to switch devices such as LEDs, switches, and relays on and off depending on the input voltage. It can also be used as a voltage-to-current converter, converting a voltage into a current that can be used to power devices requiring more power than the original voltage source can provide. In addition, the FET can be used to control the speed of motors and other devices.
In terms of its application fields, the SIUD 412ED-T1-GE3 has several potential uses. Its low gate charge and extended RDS(on) range make it well-suited for use in high frequency switching applications, such as those found in automotive and industrial applications. Also, because of its medium voltage capability, it can be used in higher voltage industrial or commercial circuits. The FET can also be used in automotive circuits to control the power supply and current draw of motors. In addition, it can be used as a voltage-to-current converter for powering devices that require higher voltages than the source can provide, such as high-power LED lights.
Overall, the SIUD412ED-T1-GE3 is an excellent choice for digital switching applications, as well as industrial, automotive, and commercial circuits. Its advantages include low power consumption, extended RDS(on) range, medium voltage capability, and low gate charge. When properly used, the FET has the potential for a wide range of applications, and can help to design efficient and reliable high frequency circuits.
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