SIUD412ED-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIUD412ED-T1-GE3TR-ND

Manufacturer Part#:

SIUD412ED-T1-GE3

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 12V 500MA PWRPAK0806
More Detail: N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount ...
DataSheet: SIUD412ED-T1-GE3 datasheetSIUD412ED-T1-GE3 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04733
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 6V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 0.71nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 340 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Field Effect Transistor (FET) is a type of transistor that operates on a voltage controlled current source. The SIUD412ED-T1-GE3 is an N-channel enhancement mode Field Effect Transistor specifically designed for digital switching applications. It is an optimal choice for high frequency switching applications, where the current transfers are pushed to their limits.

The SIUD412ED-T1-GE3 is a medium voltage device, featuring low power consumption and low gate charge (Qg). It allows for the design of highly efficient circuits in a small package, with a wide range of current ratings. It also features an extended RDS(on) range, which makes it well-suited for applications where peak performance is essential.

In general, the SIUD412ED-T1-GE3\'s working principle is quite simple. In enhancement mode operation, an external voltage is applied across the gate-drain and gate-source terminals, allowing electrons to flow between the drain and source terminals. This flow of electrons is a function of voltage applied across the gate-source and gate-drain terminals, and the current will be modulated by the magnitude of this voltage. As this voltage is increased, more electrons flow and more current is able to pass through the device.

Because of its simple operation, the SIUD412ED-T1-GE3 is an ideal choice for digital switching applications. This transistor can be used to switch devices such as LEDs, switches, and relays on and off depending on the input voltage. It can also be used as a voltage-to-current converter, converting a voltage into a current that can be used to power devices requiring more power than the original voltage source can provide. In addition, the FET can be used to control the speed of motors and other devices.

In terms of its application fields, the SIUD 412ED-T1-GE3 has several potential uses. Its low gate charge and extended RDS(on) range make it well-suited for use in high frequency switching applications, such as those found in automotive and industrial applications. Also, because of its medium voltage capability, it can be used in higher voltage industrial or commercial circuits. The FET can also be used in automotive circuits to control the power supply and current draw of motors. In addition, it can be used as a voltage-to-current converter for powering devices that require higher voltages than the source can provide, such as high-power LED lights.

Overall, the SIUD412ED-T1-GE3 is an excellent choice for digital switching applications, as well as industrial, automotive, and commercial circuits. Its advantages include low power consumption, extended RDS(on) range, medium voltage capability, and low gate charge. When properly used, the FET has the potential for a wide range of applications, and can help to design efficient and reliable high frequency circuits.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIUD" Included word is 3
Part Number Manufacturer Price Quantity Description
SIUD402ED-T1-GE3 Vishay Silic... 0.06 $ 1000 MOSFET N-CH 20V 1A POWERP...
SIUD403ED-T1-GE3 Vishay Silic... 0.05 $ 6000 MOSFET P-CH 20V 500MA PWR...
SIUD412ED-T1-GE3 Vishay Silic... 0.06 $ 3000 MOSFET N-CH 12V 500MA PWR...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics