SKI10123 Discrete Semiconductor Products |
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Allicdata Part #: | SKI10123TR-ND |
Manufacturer Part#: |
SKI10123 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 100V 66A TO-263 |
More Detail: | N-Channel 100V 66A (Tc) 135W (Tc) Surface Mount TO... |
DataSheet: | SKI10123 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.53794 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.6 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 88.8nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6420pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 135W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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SKI10123 is a type of insulated-gate field-effect transistor (IGFET) that is commonly used in a wide range of applications, such as voltage and power management, switching and amplification. IGFETs are made up of two separate symmetrical structures – the source and drain – that are connected to an insulation layer and a gate. The source and drain structure allows electrons to flow between the source and drain, while the insulation layer allows a small amount of current to pass through to the gate. When an appropriate voltage is applied to the gate, it causes the electrons to flow between the source and the drain, enabling the electronic components to be activated or deactivated.
SKI10123 works by using a voltage driven, voltage controlled conduction principle. This means that the voltage applied to the gate voltage controls the conduction between the source and drain. The higher the gate voltage, the higher the conduction between the source and drain. SKI10123 is a symmetrical transistor, meaning that it can control current flow in both directions, which makes it incredibly versatile in numerous applications. In electronic applications, SKI10123 can be used as a switch, amplifier, or power supply, making it an invaluable component in a wide range of devices. One common use of SKI10123 is as an amplifier. By applying a small voltage to the gate, the flow of electrons between the source and drain can be controlled, which allows for amplification of signals. SKI10123 can also be used as a low-side switch, meaning that it can be used to control the power supply of a circuit. By connecting the gate to ground, the transistor can be turned off and will keep the power source connected to the source and drain in a low-power state. Similarly, if the transistor is switched on, the power source will be connected to the source and drain, thus allowing the circuit to be powered.Another use for SKI10123 is as a voltage regulator. By connecting the gate to an adjustable voltage source, the flow of current between the source and drain can be controlled, enabling the user to adjust the voltage as needed. This makes SKI10123 a great choice for regulating the voltage output in a variety of electrical systems, such as computer power supplies and automotive systems. Due to its versatility and cost-effectiveness, SKI10123 is an incredibly popular choice for powering and controlling electronic components in a wide range of applications. With its easy-to-use and customizable features, SKI10123 is the perfect choice for anyone looking to reduce costs while still getting reliable performance.
The specific data is subject to PDF, and the above content is for reference
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