SKI10297 Discrete Semiconductor Products

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The SKI10297 is a specialized high current Power MOSFET. It is a single N-channel enhancement type MOSFET and consists of a Si-based substrate (HEXFET) and a specific number of vertical N-channel MOSFETs. The design of the device allows it to operate with an extremely high degree of current gain, making it particularly suitable for voltage conversion and regulation applications—especially those where power dissipation is a concern.

The working principle of the device is relatively simple. When a positive voltage is applied to the gate, it attracts electrons to the channel and forms an inversion layer. This generates a current that flows from the source to the drain and allows power to be transferred from one circuit to another. As the gate voltage is increased, the resistance between the source and the drain is significantly reduced, increasing the current and power dissipation of the device. Conversely, reducing the gate voltage will result in a proportional decrease in current and power dissipation.

The SKI10297 is well suited for use in a range of related applications, including but not limited to, automotive DC-DC converters, notebook computer power supplies, LCD and LED backlight inverters, server and networking equipment, and consumer electronics. Due to the device’s high current gain, it is ideally suited for applications where high current throughput is required in order to maintain reasonable efficiency. Additionally, due to its low on-resistance, it can be used in synchronous buck converters, DC-DC converters, and other power conversion devices.

The SKI10297 works best in applications where the gate voltage needs to be adjusted for optimal performance. It can provide up to 30A of continuous drain current at a gate voltage of 5V, and up to 40A at a gate voltage of 10V. It also has a low gate charge and a low thermal impedance, meaning that it can handle high power dissipation without any significant degrading of performance. The device is also relatively easy to use and integrate into existing designs, as it is compatible with both standard and custom circuit designs.

In conclusion, the SKI10297 is a specialized Power MOSFET with a high degree of current gain suitable for high current applications. It is well suited for voltage conversion and regulation applications, due to its high current gain, low on-resistance, low gate charge, and low thermal impedance. Adding to its usefulness, the device is easy to integrate into existing designs and provides up to 30A of continuous drain current at 5V and up to 40A of continuous drain current at 10V.

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