| Allicdata Part #: | 863-1067-2-ND |
| Manufacturer Part#: |
SKY65050-372LF |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Skyworks Solutions Inc. |
| Short Description: | IC PHEMT 2.4GHZ 70MA LN SC70-4 |
| More Detail: | RF Mosfet pHEMT FET 3V 20mA 2.4GHz 15.5dB 10.5dBm ... |
| DataSheet: | SKY65050-372LF Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.56675 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | pHEMT FET |
| Frequency: | 2.4GHz |
| Gain: | 15.5dB |
| Voltage - Test: | 3V |
| Current Rating: | 55mA |
| Noise Figure: | 0.4dB |
| Current - Test: | 20mA |
| Power - Output: | 10.5dBm |
| Voltage - Rated: | 6V |
| Package / Case: | SC-82A, SOT-343 |
| Supplier Device Package: | SC-70-4 |
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SKY65050-372LF is a type of field-effect transistor (FET) with a metal–oxide–semiconductor (MOS) configuration. It is designed for applications in high frequency radio frequencies (RF) ranging from 5GHz to 7GHz. It is manufactured by Skyworks Solutions and is one of the highest performing RF discrete components in its market segment.
The SKY65050-372LF draws its name from the Greek god Zeus and the Apollo spacecraft missions. The Apollo missions were the first manned space flights to explore the moon and the Apollo 11 mission famously carried the first man to walk on its surface.
The SKY65050-372LF is designed on a compact ceramic-based package and utilizes a high-performance pHEMT process. This package measures 0.4mm x 0.4mm x 0.25mm and is ideal for applications where space is at a premium. It also has a very high off-state drain current which helps to ensure a low quiescent current despite its size. The SKY65050-372LF also provides a better power-added efficiency than other devices in its class.
The working principle of the SKY65050-372LF is based on the movement of opposing electric fields in the transistor. This occurs when a voltage is applied to the gate electrode. A positive voltage causes an electric field to form at the surface of the gate which attracts or repels electrons in the underlying channel region. The current flow through the transistor is then determined by the amount of electrons being attracted or repelled, depending on the type of charge applied to the gate.
The principle of operation has made the device very reliable and very efficient in its applications. It is also highly resilient to temperature variations and has a maximum junction temperature of 175 degrees Celsius. The device has a high breakdown voltage of 9V and a maximum voltage of 4V. This ensures that it is capable of handling large input voltages without compromising its performance.
The SKY65050-372LF is an excellent choice for applications in high frequency radio frequencies (RF). It is capable of operating at frequencies up to 6GHz and offers a high power handling capability. It is also very reliable and efficient with a maximum junction temperature of 175 degrees Celsius. With its compact size and excellent power-added efficiency, the SKY65050-372LF is ideal for compact systems and is an excellent choice for applications requiring good RF performance.
The specific data is subject to PDF, and the above content is for reference
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SKY65050-372LF Datasheet/PDF