SM8S10AHE3/2E Allicdata Electronics
Allicdata Part #:

SM8S10AHE3/2E-ND

Manufacturer Part#:

SM8S10AHE3/2E

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 10V 17V DO218AB
More Detail: N/A
DataSheet: SM8S10AHE3/2E datasheetSM8S10AHE3/2E Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 17V
Supplier Device Package: DO-218AB
Package / Case: DO-218AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Current - Peak Pulse (10/1000µs): 388A
Series: Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min): 11.1V
Voltage - Reverse Standoff (Typ): 10V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes provide superior over-voltage protection as they act as a kind of "clamp" that limits the voltage being applied to the device. They also provide protection from transient voltage events that result from inductive and capacitive switching, lightning and electrostatic discharges. The SM8S10AHE3/2E device from ON Semiconductor is an example of a TVS diode. It is a high-efficiency shunt device specifically designed to protect precision analog and sensitive digital circuits from voltage spikes.

The SM8S10AHE3/2E device is a high-efficiency positive shunt, or reverse, TVS diode. This device is designed to protect electronic circuits from transient voltage excursions, exceeding the stand-off voltage but not allowing more than 0.5V positive or negative source-drain voltage. This feature makes these devices suitable for level shifting applications. The SM8S10AHE3/2E device is available in both 3-pin and 2-pin packages, and has a maximum stand-off voltage of 34V (max). The device can be used in various application fields, including but not limited to, Automotive, Computer and Telecommunications, Industrial, and Consumer Electronics.

The working principle of the SM8S10AHE3/2E device is quite simple. When the input voltage reaches a certain level, usually the stand-off voltage, the device “clamps” the voltage and prevents it from increasing further. This means that when a voltage spike is detected, the device stops conducting and diverts the energy away from the protected circuit, preventing any damage from occurring. This process occurs in less than 1 microsecond, providing superior protection for vulnerable components.

In conclusion, the SM8S10AHE3/2E device from ON Semiconductor is an excellent example of a TVS diode. It provides superior over-voltage protection for a variety of applications and works by “clamping” voltage when it exceeds a certain level. Its maximum stand-off voltage of 34V makes it suitable for level shifting applications. Furthermore, it is fast enough to react to transient voltage events in less than 1 microsecond. This makes it ideal for protecting precision analog and sensitive digital circuits from voltage spikes.

The specific data is subject to PDF, and the above content is for reference

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