SM8S13HE3/2D

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TVS - Diodes are widely-used semiconductor components in electrical circuits, and the SM8S13HE3/2D is one type of them. It is an unidirectional, over-voltage protection device that uses a unique silicon structure to provide enhanced clamping and low leakage current. It contains 2 discrete diodes in reverse-parallel arrangement that can reduce the clamping voltage in response to over-voltage signals, thereby protecting the circuit components from damage.

The SM8S13HE3/2D has a number of applications, including protection for communications lines in telecommunications and for high speed data lines in computer systems. It can also be used in automotive circuits for protecting against electrostatic discharge (ESD). In addition, these components are often used in power supplies, especially for switching or linear supplies, to protect sensitive components from overcurrent. This type of device is also suitable for use in AC and DC power distribution systems.

The working principle behind the SM8S13HE3/2D is relatively simple. It contains two discrete diodes, one operating in forward mode and the other in reverse mode, in a reverse-parallel connection. When an over-voltage condition occurs, the forward diode conducts, allowing current to flow from the line to the device. At the same time, the reverse diode responds to the higher voltage, conducting current in the opposite direction from the device to the line. This reverse current “clamps” the voltage, limiting the high-voltage surge. The clamped voltage is then limited to a relatively low level that is safe for the circuit components.

The SM8S13HE3/2D is specifically designed to provide over-voltage protection while also minimizing power loss. It features a low clamping voltage of 4.5V which, combined with its low leakage current and high peak pulse power capability of 1150 Watts, results in minimal power dissipation and excellent transient protection. The small size and low profile of the device also make it ideal for use in compact, high-density designs.

In general, the SM8S13HE3/2D is an excellent choice for protecting sensitive devices and components in a wide range of applications. Its combination of low leakage current, high peak pulse power, and low clamping voltage make it a highly reliable device for providing over-voltage protection. In addition, its small size and low profile make it suitable for use in even the most compact designs.

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