SM8S20HE3/2D

Current - Peak Pulse (10/1000µs):	184A
Base Part Number:	SM8S
Supplier Device Package:	DO-218AB
Package / Case:	DO-218AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	6600W (6.6kW)
Series:	Automotive, AEC-Q101, PAR®
Voltage - Clamping (Max) @ Ipp:	35.8V
Voltage - Breakdown (Min):	22.2V
Voltage - Reverse Standoff (Typ):	20V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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SM8S20HE3/2D Application Field and Working Principle

The SM8S20HE3/2D is a Transient Voltage Suppressor (TVS) diode that can be used to protect electronic equipment in various applications. This particular device is constructed on a layered Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure that can be used to withstand relatively high surge voltages as well as provide a low dynamic resistance.

Application Fields

The SM8S20HE3/2D TVS Diode can be used in a wide variety of applications. These include providing protection against lightning-induced transients, electrostatic discharge (ESD) events, power supply over-voltage protection, data line protection, and motor control/operation protection.The SM8S20HE3/2D can also be used in automotive applications. It is designed to provide protection to the automobile\'s 12V system, which provides power to accessories such as headlights, radio, and power windows. It is also often used in automotive ignition systems to prevent an uncontrolled spark when starting the car.The SM8S20HE3/2D can also be found in consumer and industrial electronics, such as computers, TVs, home appliances, and other electrical systems.

Working Principle

The SM8S20HE3/2D is designed to provide protection against transient voltage surges. It does this by utilizing a SONOS structure, which is composed of layers of Silicon-Oxide-Nitride-Oxide-Silicon. This structure enables the diode to have a high breakdown voltage as well as a low dynamic resistance that can withstand large surge voltages. When a surge voltage is introduced, the diode’s breakdown voltage is exceeded. When this occurs, the diode conducts a current, which causes the surge voltage to be dissipated. This dissipated energy is then converted into heat, which is dissipated through the diode\'s package.

Conclusion

The SM8S20HE3/2D Transient Voltage Suppressor diode is a versatile and robust device that can provide protection against transient voltage surges in a wide variety of applications. Its layered SONOS structure provides a high breakdown voltage as well as a low dynamic resistance that can withstand large surge voltages. When a surge voltage is introduced, the diode conducts a current, dissipating the surge voltage and converting the energy into heat, which is dissipated through the diode\'s package.

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