Allicdata Part #: | SM8S11ATHE3/I-ND |
Manufacturer Part#: |
SM8S11ATHE3/I |
Price: | $ 1.12 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 11V 18.2V DO218AC |
More Detail: | N/A |
DataSheet: | SM8S11ATHE3/I Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
750 +: | $ 1.01871 |
Voltage - Clamping (Max) @ Ipp: | 18.2V |
Supplier Device Package: | DO-218AC |
Package / Case: | DO-218AC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 6600W (6.6kW) |
Current - Peak Pulse (10/1000µs): | 363A |
Series: | Automotive, AEC-Q101, PAR® |
Voltage - Breakdown (Min): | 12.2V |
Voltage - Reverse Standoff (Typ): | 11V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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SM8S11ATHE3/I Application Field and Working Principle
TVS doping is one of the newest technologies of Transient Voltage Suppressor (TVS) devices and SM8S11ATHE3/I is one example of these devices. A TVS diode forms a two-terminal electronic device, which is used to protect electronics, connectors, and cables from Transient Voltage events, such as surge, strike, and nearby lightning.
Overview Of SM8S11ATHE3/I
The SM8S11ATHE3/I is a dual-channel bidirectional transient voltage suppressor (TVS) with an 8V breakdown voltage and 11A peak pulse current capability. It is designed to protect electronic circuitry from high voltage and power transient events. It features a low clamping ratio, fast response time, low input capacitance, and low operating voltage.
Applications For SM8S11ATHE3/I
The SM8S11ATHE3/I is widely used for TVS applications such as surge protection, power anomalies protection, and electromagnetic interference (EMI) protection. Some of the most common applications for this device include cellular telephones, networking devices, telecom lines, industrial and automotive protection, and power supplies.
Working Principle Of SM8S11ATHE3/I
The working principle of SM8S11ATHE3/I is fairly simple. The device utilizes a breakdown voltage between its anode and cathode terminals to limit the voltage applied to the protected circuit. When a low or moderate voltage is applied to the TVS diode, the diode remains non-conductive and provides no protection. When a higher voltage exceeds the breakdown voltage, the diode becomes conductive and offers a path for the current to bypass the protected circuitry.
Theprotected device exhibits a low clamping ratio and works to limit the voltage applied to the protected circuit to a safe level by passing current to ground. In order to ensure reliable protection, it is important that the breakdown voltage of the TVS diode matches the voltage of the circuit it is protecting.
Advantages of SM8S11ATHE3/I
The main advantage of the SM8S11ATHE3/I is its low cost. This makes it an appealing choice for a wide range of applications. In addition, the device features a low clamping ratio, fast response time, and low operating voltage. Furthermore, the device also boasts an industry-leading 8V breakdown voltage and 11A peak pulse current capability.
Conclusion
SM8S11ATHE3/I is a popular TVS diode that offers reliable protection from transient voltage events, such as surge, strike, and nearby lightning. It has a low clamping ratio, fast response time, and low operating voltage which makes it an attractive choice. The device is commonly used in cellular telephones, networking devices, telecom lines, industrial and automotive protection, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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