SM8S16ATHE3/I Circuit Protection

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Surge protective devices are an important group of protection components, which play an important role in the circuit. Among them, TVS - Diodes also possess a thermal protection element that can minimise circuit damage caused by current-driven heating. The SM8S16ATHE3/I, an 18V surge protective diode, is a typical representative of such a structure.

The SM8S16ATHE3/I features a monolithic design using its N−channel MOSFET and integrated transient voltage clamp, and offers an operating operating current (IO) range from 40 to 200 mA. This makes it suitable for use in various local and remote power supplies. Its working principle is mainly derived from its monolithic structure which blends the N-channel MOSFETs and transient voltage protection components in a single package. This design helps the SM8S16ATHE3/I meet the needs of a wide variety of products, from communication systems, industrial controllers, home ventilation systems, and more.

The SM8S16ATHE3/I works by using its N−channel MOSFET to provide a short-circuit between circuit and supply lines when the power source encounters an overvoltage condition. This MOSFET stays open until the overvoltage condition subsides and automatically resumes normal operating conditions. This ensures there is no possibility of a permanent short caused by device failure.

In addition, the SM8S16ATHE3/I utilizes its integrated transient voltage protection element to clamp overvoltage peaks that may occur. This element incorporates state-of-the-art peak avalanche voltage suppression technology and offers high on-state surge currents with low leakage. Its design includes a voltage regulator and Zener diode, working together to ensure a typical clamping voltage of 18V.

Overall, the SM8S16ATHE3/I is an 18V surge protective diode that is well suited for applications requiring a current range of 40 to 200 mA. Its monolithic design combines its N−channel MOSFET and integrated transient voltage protection element in a single package, allowing the diode to offer efficient, reliable, and cost-effective protection to both remote and local power supplies. Its use of state-of-the-art peak avalanche voltage suppression technology also ensures the device can provide reliable protection against overvoltage peaks.

The specific data is subject to PDF, and the above content is for reference