SM8S36AHE3_A/I Allicdata Electronics
Allicdata Part #:

SM8S36AHE3_A/IGITR-ND

Manufacturer Part#:

SM8S36AHE3_A/I

Price: $ 2.06
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 36V 58.1V DO218AB
More Detail: N/A
DataSheet: SM8S36AHE3_A/I datasheetSM8S36AHE3_A/I Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.06000
10 +: $ 1.99820
100 +: $ 1.95700
1000 +: $ 1.91580
10000 +: $ 1.85400
Stock 1000Can Ship Immediately
$ 2.06
Specifications
Voltage - Clamping (Max) @ Ipp: 58.1V
Supplier Device Package: DO-218AB
Package / Case: DO-218AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Current - Peak Pulse (10/1000µs): 114A
Series: Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min): 40V
Voltage - Reverse Standoff (Typ): 36V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The SM8S36AHE3_A/I is a type of transistor suppression diode (TVS) that provides transient voltage protection. It is manufactured by NXP and is a two-mode TVS diode, offering unidirectional and bidirectional protection schemes. The SM8S36AHE3_A/I utilizes both diode avalanche technology and zener clamping to protect against electrical transients in a wide variety of applications.

The SM8S36AHE3_A/I is designed to provide protection from fast transient electrical overloads caused by causes such as static discharges, electrostatic discharge (ESD), inductive switching, and high-voltage power surges. It is designed to protect a wide range of electronic circuits, allowing it to be used in a variety of applications, but is particularly suitable for high-frequency and low-noise applications. This makes it an ideal choice for surge protection in RF, digital, and analog circuits.

The SM8S36AHE3_A/I is available in surface-mount packages, making it easy to install and use in circuits. It has a breakdown voltage of 8 V and a working current of 1A, offering nominal protection up to 8V with a peak surge current of up to 18A. It is rated to operate at a temperature range of -55 to +175°C, making it suitable for use in extreme temperatures.

The working principle of the SM8S36AHE3_A/I is based on diode avalanche technology. In this process, an avalanche breakdown of the diode is initiated by the application of a reverse voltage. This breakdown produces a large current, far greater than the original applied voltage, and clamps the voltage of the circuit to a safe level. So during a transient voltage event, the diode will draw the current away from the circuit and keep it safe from damage.

In addition to the diode avalanche technology, the SM8S36AHE3_A/I also employs zener clamping. Zener clamping works by utilizing the zener diode’s voltage breakdown characteristics to limit the voltage in the circuit. The zener diode will drop the load voltage to a safe level during a transient voltage event, thus protecting the circuit from damage.

The SM8S36AHE3_A/I is a versatile TVS diode that can provide both unidirectional and bidirectional protection in a variety of applications. It is manufactured in surface-mount packages and has an operating temperature range of -55°C to +175°C, making it suitable for use in a wide range of environments. With its low on-resistance and high surge current rating, the SM8S36AHE3_A/I is an ideal choice for providing transient voltage protection in RF, digital, and analog circuits.

The specific data is subject to PDF, and the above content is for reference

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