| Allicdata Part #: | SM8S36AHE3_A/IGITR-ND |
| Manufacturer Part#: |
SM8S36AHE3_A/I |
| Price: | $ 2.06 |
| Product Category: | Circuit Protection |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | TVS DIODE 36V 58.1V DO218AB |
| More Detail: | N/A |
| DataSheet: | SM8S36AHE3_A/I Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 2.06000 |
| 10 +: | $ 1.99820 |
| 100 +: | $ 1.95700 |
| 1000 +: | $ 1.91580 |
| 10000 +: | $ 1.85400 |
| Voltage - Clamping (Max) @ Ipp: | 58.1V |
| Supplier Device Package: | DO-218AB |
| Package / Case: | DO-218AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | Automotive |
| Power Line Protection: | No |
| Power - Peak Pulse: | 6600W (6.6kW) |
| Current - Peak Pulse (10/1000µs): | 114A |
| Series: | Automotive, AEC-Q101, PAR® |
| Voltage - Breakdown (Min): | 40V |
| Voltage - Reverse Standoff (Typ): | 36V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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.The SM8S36AHE3_A/I is a type of transistor suppression diode (TVS) that provides transient voltage protection. It is manufactured by NXP and is a two-mode TVS diode, offering unidirectional and bidirectional protection schemes. The SM8S36AHE3_A/I utilizes both diode avalanche technology and zener clamping to protect against electrical transients in a wide variety of applications.
The SM8S36AHE3_A/I is designed to provide protection from fast transient electrical overloads caused by causes such as static discharges, electrostatic discharge (ESD), inductive switching, and high-voltage power surges. It is designed to protect a wide range of electronic circuits, allowing it to be used in a variety of applications, but is particularly suitable for high-frequency and low-noise applications. This makes it an ideal choice for surge protection in RF, digital, and analog circuits.
The SM8S36AHE3_A/I is available in surface-mount packages, making it easy to install and use in circuits. It has a breakdown voltage of 8 V and a working current of 1A, offering nominal protection up to 8V with a peak surge current of up to 18A. It is rated to operate at a temperature range of -55 to +175°C, making it suitable for use in extreme temperatures.
The working principle of the SM8S36AHE3_A/I is based on diode avalanche technology. In this process, an avalanche breakdown of the diode is initiated by the application of a reverse voltage. This breakdown produces a large current, far greater than the original applied voltage, and clamps the voltage of the circuit to a safe level. So during a transient voltage event, the diode will draw the current away from the circuit and keep it safe from damage.
In addition to the diode avalanche technology, the SM8S36AHE3_A/I also employs zener clamping. Zener clamping works by utilizing the zener diode’s voltage breakdown characteristics to limit the voltage in the circuit. The zener diode will drop the load voltage to a safe level during a transient voltage event, thus protecting the circuit from damage.
The SM8S36AHE3_A/I is a versatile TVS diode that can provide both unidirectional and bidirectional protection in a variety of applications. It is manufactured in surface-mount packages and has an operating temperature range of -55°C to +175°C, making it suitable for use in a wide range of environments. With its low on-resistance and high surge current rating, the SM8S36AHE3_A/I is an ideal choice for providing transient voltage protection in RF, digital, and analog circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SM8S14HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 14V 25.8V DO218... |
| SM8S18ATHE3/I | Vishay Semic... | -- | 1000 | TVS DIODE 18V 29.2V DO218... |
| SQF-SM8S4-32G-S9E | Advantech Co... | 274.85 $ | 1000 | SSD 32GB SLC M.2 SATAIIIS... |
| SM8S13AHE3_A/I | Vishay Semic... | -- | 1000 | TVS DIODE 13V 21.5V DO218... |
| SM8S17ATHE3/I | Vishay Semic... | 1.12 $ | 1000 | TVS DIODE 17V 27.6V DO218... |
| SM8S30A-E3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 30V 48.4V DO218... |
| SM8S40AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 40V 64.5V DO218... |
| SQF-SM8S4-4G-S9C | Advantech Co... | 44.51 $ | 1000 | SSD 4GB SLC M.2 SATAIIISo... |
| SM8S28AHE3_A/I | Vishay Semic... | 1.78 $ | 1000 | TVS DIODE 28V 45.4V DO218... |
| SM8S20-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
| SM8S15ATHE3/I | Vishay Semic... | 1.12 $ | 1000 | TVS DIODE 15V 24.4V DO218... |
| SM8S26A-E3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 26V 42.1V DO218... |
| SM8S36AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 36V 58.1V DO218... |
| SM8S22A-TP | Micro Commer... | 1.18 $ | 1000 | TVS DIODE 22V 35.5V DO218... |
| SM8S24AHE3_A/I | Vishay Semic... | -- | 1000 | TVS DIODE 24V 38.9V DO218... |
| SQF-SM8S1-1G-S9C | Advantech Co... | 21.29 $ | 1000 | SSD 1GB SLC M.2 SATAIIISo... |
| SM8S20HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
| SQF-SM8S4-64G-S9C | Advantech Co... | 460.66 $ | 1000 | SSD 64GB SLC M.2 SATAIIIS... |
| SQF-SM8S2-2G-S9C | Advantech Co... | 29.04 $ | 1000 | SSD 2GB SLC M.2 SATAIIISo... |
| SQF-SM8S2-2G-S9E | Advantech Co... | 34.84 $ | 1000 | SSD 2GB SLC M.2 SATAIIISo... |
| SM8S26HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 26V 46.6V DO218... |
| SM8S33AHE3/2D | Vishay Semic... | -- | 1 | TVS DIODE 33V 53.3V DO218... |
| SM8S13AHE3/2E | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO218... |
| SM8S18AHE3_A/I | Vishay Semic... | -- | 1000 | TVS DIODE 18V 29.2V DO218... |
| SM8S26HE3/2E | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 26V 46.6V DO218... |
| SM8S11AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 11V 18.2V DO218... |
| SM8S26A-TP | Micro Commer... | 1.18 $ | 1000 | TVS DIODE 26V 42.1V DO218... |
| SM8S30HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 30V 53.5V DO218... |
| SM8S28AHE3/2E | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28V 45.4V DO218... |
| SM8S24AHE3/2E | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 24V 38.9V DO218... |
| SM8S40-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 40V 71.4V DO218... |
| SM8S14ATHE3/I | Vishay Semic... | 1.12 $ | 1000 | TVS DIODE 14V 23.2V DO218... |
| SM8S15-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15V 26.9V DO218... |
| SM8S10A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 10V 17V DO218AB |
| SM8S20HE3/2E | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
| SM8S10AHE3/2E | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 10V 17V DO218AB |
| SM8S43AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 43V 69.4V DO218... |
| SM8S28HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28V 50.1V DO218... |
| SM8S36AHE3_A/I | Vishay Semic... | -- | 1000 | TVS DIODE 36V 58.1V DO218... |
| SM8S28ATHE3/I | Vishay Semic... | 1.12 $ | 1000 | TVS DIODE 28V 45.4V DO218... |
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SM8S36AHE3_A/I Datasheet/PDF