SM8S30HE3/2D Allicdata Electronics
Allicdata Part #:

SM8S30HE3/2D-ND

Manufacturer Part#:

SM8S30HE3/2D

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 30V 53.5V DO218AB
More Detail: N/A
DataSheet: SM8S30HE3/2D datasheetSM8S30HE3/2D Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 123A
Base Part Number: SM8S
Supplier Device Package: DO-218AB
Package / Case: DO-218AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Series: Automotive, AEC-Q101, PAR®
Voltage - Clamping (Max) @ Ipp: 53.5V
Voltage - Breakdown (Min): 33.3V
Voltage - Reverse Standoff (Typ): 30V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction to SM8S30HE3/2DThe SM8S30HE3/2D is a two-terminal surface mounted Transient Voltage Suppression (TVS) Diode. It is a 40V device with a maximum standoff voltage of 24V, a peak power of 400W, and a maximum clamping voltage of 30V for a 8/20 μs waveform. It also provides excellent ESD protection by utilizing SM8S DIODE TECHNOLOGY.Application FieldThe SM8S30HE3/2D is designed to protect sensitive electrical components from ESD, lightning transients, inductive rise, negative transients or transients from DC power sources. It is an ideal choice for automotive, consumer electronic, industrial and telecom applications where protection from transient over-voltages and ESD is required.SM8S30HE3/2D Working PrincipleThe SM8S30HE3/2D features a high-frequency low-power SPRING (Soft Punch-Through) diode structure, which senses incoming transients and quickly clamp the voltage within 8 nanoseconds for ESD protection and 30 nanoseconds for lightning and power distribution protection. The SMRS diode structure allows the SM8S30HE3/2D to offer superior dynamic response over a wide variety of transient events. In addition, the SM8S30HE3/2D boasts an ultra-low capacitance which helps to reduce glitches and EMI in sensitive circuits that require transient protection.The SM8S30HE3/2D also provides a low leakage current and low clamping ratio which ensures that it effectively protects a wide range of components. The SM8S30HE3/2D can also endure multiple rejection events as well as thermal cycling without compromising its performance. Lastly, the SM8S30HE3/2D features a solution space that is nearly half the size of a SOT-343 package, making it ideal for applications with limited board space.ConclusionThe SM8S30HE3/2D is an ideal solution for ESD, lightning, and transients protection, offering superior transient protection and EMI suppressing qualities in a very compact package. With a maximum standoff voltage of 24V, a peak power of 400W, and an ultra-low capacitance, the SM8S30HE3/2D is a versatile device, designed for a wide range of automotive, consumer electronic, industrial and telecom applications.

The specific data is subject to PDF, and the above content is for reference

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SM8S13AHE3/2E Vishay Semic... 0.0 $ 1000 TVS DIODE 13V 21.5V DO218...
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